文献类型：期刊文献

英文题名：Bootstrap current increment after siliconization on the HT-7 tokamak

作者：Zhang, XM; Wan, BN; Lu, YC

机构：[1]E China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China;[2]Acad Sinica, Inst Plasma Phys, Hefei 230031, Peoples R China

年份：2002

卷号：19

期号：8

起止页码：1141

外文期刊名：CHINESE PHYSICS LETTERS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000177577700034)】；

语种：英文

摘要：We present some results for the estimation of the bootstrap current after siliconization on the HT-7 tokamak. After siliconization, the plasma pressure gradient and the electron temperature near the boundary are larger than before siliconization. These factors influence the ratio of the bootstrap current to the total plasma current which increases from several per cent to above 10%. The results are expected to explain the previous experimental phenomena that, after siliconization, the plasma current profile is broadened and the higher current can be obtained easily on the HT-7 tokamak experiment.