文献类型：期刊文献

英文题名：Structures, varistor properties, and electrical stability of ZnO thin films

作者：Lu, Hui[1];Wang, Yuele[1];Lin, Xian[1]

机构：[1]E China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China

年份：2009

卷号：63

期号：27

起止页码：2321

外文期刊名：MATERIALS LETTERS

收录：;EI(收录号：20093712304846);WOS:【SCI-EXPANDED(收录号:WOS:000270632200016)】；

语种：英文

外文关键词：ZnO thin film; Microstructure; Electrical properties; Varistors; Stability

摘要：In this letter, we report the structures, varistor properties, and electrical stability of ZnO thin films deposited by the gas discharge activated reaction evaporation (GDARE) technique. The X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements showed that the thin films thus prepared have polycrystalline structures with the preferred orientation along the (002) plane whose surface consists of ZnO aggregates with sizes of 50-200 nm. The ZnO thin films deposited by GDARE and annealed at 250 degrees C for 2 h have strong nonlinear varistor-type I-V characteristics. The nonlinear coefficient (alpha) of a single-layered ZnO thin film sample was 33 and that of a triple-layered sample obtained by the many-time deposition was 62. The varistor voltages (V-1mA) of the two samples are found rather close each other. Under a DC bias of 0.75 V-1mA and a temperature of 150 degrees C these thin films exhibit good electrical stability with a degradation rate coefficient K-T of 0.05 mA/h(1/2). (C) 2009 Elsevier B.V. All rights reserved.