文献类型：期刊文献

中文题名：激基复合物给体作间隔层对激子复合区域的调节

英文题名：Adjustment of Exciton Recombination Zone by Utilizing The Donor of Exciplex as Spacer Layer

作者：高浩锋[1];方圣欢[1];张叶峰[1];陆勍[1];吕昭月[1]

机构：[1]华东理工大学理学院物理系,上海200237

年份：2017

卷号：38

期号：4

起止页码：514

中文期刊名：发光学报

外文期刊名：Chinese Journal of Luminescence

收录：CSTPCD;;EI(收录号：20171903645804);Scopus;北大核心:【北大核心2014】；CSCD:【CSCD2017_2018】；

基金：国家自然科学基金(11504109);上海市大学生创新训练项目(S16089)资助~~

语种：中文

中文关键词：间隔层;激基复合物;激子复合区域;TPD;BPhen

外文关键词：spacer; exciplex; exciton recombination zone; TPD; BPhen;

摘要：为研究激基复合物器件激子复合区域的变化,在TPD/BPhen界面可形成激基复合物发光的基础上,以Ir(pq)2(acac)为探测层,制备器件ITO/Mo O_3(2.5 nm)/TPD((40-x)nm)/Ir(pq)2(acac)(0.5 nm)/TPD(x,x=0,3,6,10 nm)/BPhen(40 nm)/Cs2CO_3/Al,其中靠近BPhen的TPD称之为间隔层。电致发光光谱表明,该组器件的激子复合区域主要位于Ir(pq)2(acac)薄层和TPD/BPhen界面,分别发射595 nm和478 nm的光。随着TPD间隔层厚度的增加和电压的升高,发光区域向激基复合物区域(TPD/BPhen界面)移动,即更多的电子和空穴在TPD/BPhen界面形成激基复合物发光,Ir(pq)2(acac)发光减弱。当间隔层厚度由0 nm增至10nm时,6 V电压下的Ir(pq)2(acac)和激基复合物发光强度的比值由44降至1.5。对于间隔层厚度为6 nm的器件,Ir(pq)2(acac)和激基复合物发光强度的比值由6 V时的2.8降至10 V时的1.0。由此可见,激基复合物给体作间隔层能有效调节激子复合区域。
In order to adjust the exciton recombination zone of exciplex-based organic light-emitting diodes,four devices were fabricated by employing Ir（ pq）2（ acac） as a prober and utilizing the donor of exciplex as a spacer.The device structures are ITO/MoO3（ 2.5 nm）/TPD（（ 40-x） nm）/Ir（ pq）2（ acac）（ 0.5 nm）/TPD（ x,x = 0,3,6,10 nm）/BPhen（ 40 nm）/Cs2CO3/Al,where x is the thickness of the spacer layer and the TPD/BPhen interface produces the exciplex emission.The electroluminescent spectra of the four devices include two main peaks： 478 nm and 595 nm,which originate from the TPD/BPhen interface and Ir（ pq）2（ acac） layer,respectively.As both the thickness of TPD spacer and the applied voltage increase,the recombination zone shifts towards TPD/BPhen interface.That is,more electrons and holes recombine at the interface between TPD and BPhen,leading to the decreased intensity of Ir（ pq）2（ acac） emission.For instance,under an applied voltage of 6 V,the intensity ratio of emission from Ir（ pq）2（ acac） and exciplex（ IIr complex∶Iexciplex） is 44.0 and 1.5 for the devices with 0 and 10 nm spacer,respectively.The value of IIr complex∶Iexciplexdecreases from 2.8 at 6 V to 1.0 at 10 V for the device with 6-nm-thick TPD spacer.Therefore,the recombination region can be effectively tuned by utilizing the donor of exciplex as a spacer.