详细信息
p-n heterojunction constructed by y-Fe2O3 covering CuO with CuFe2O4 interface for visible-light-driven photoelectrochemical water oxidation ( SCI-EXPANDED收录)
文献类型:期刊文献
英文题名:p-n heterojunction constructed by y-Fe2O3 covering CuO with CuFe2O4 interface for visible-light-driven photoelectrochemical water oxidation
作者:Liu, Yaqiao[1];Hu, Shuozhen[1];Zhang, Xinsheng[1];Sun, Shigang[2]
机构:[1]East China Univ Sci & Technol, Sch Chem Engn, State Key Lab Chem Engn, Shanghai 200237, Peoples R China;[2]Xiamen Univ, Coll Chem & Chem Engn, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
年份:2023
卷号:639
起止页码:464
外文期刊名:JOURNAL OF COLLOID AND INTERFACE SCIENCE
收录:;WOS:【SCI-EXPANDED(收录号:WOS:000949405600001)】;
基金:This work is financially supported by the National Natural Science Foundation of China (Project 22005097) . Reference 3000 potentiostat is donated by GAMRY Instruments. The authors thank the Research Center of Analysis and Test of East China University of Science and Technology for the help with the characterization.
语种:英文
外文关键词:CuO; p-n heterojunction; Internal electric field; Oxygen vacancies; Photo corrosion resistance; Photoelectrochemical water oxidation
摘要:Fe2O3 is a promising n-type semiconductor as the photoanode of photoelectrochemical water-splitting method due to its abundance, low cost, environment-friendly, and high chemical stability. However, the recombination of photogenerated holes and electrons leads to low solar-to-hydrogen efficiency. this work, to overcome the recombination issue, a p-type semiconductor, CuO, is introduced underneath the y-Fe2O3 to synthesize y-Fe2O3/CuO on the FTO substrate. Along with the formation of p-n heterojunc-tion, CuFe2O4 is in situ generated at the interface of y-Fe2O3 and CuO. The existence of Cu2O in CuO CuFe2O4 promotes the charge transfer from CuO to y-Fe2O3 and within CuFe2O4, respectively, resulting creating an internal electric field in y-Fe2O3/CuO and leading to the conduction band of CuO bending and y-Fe2O3 bending down. Additionally, Cu(II) in CuFe2O4 contributes to fast electron capture. Consequently, the charge transfer efficiency and charge separation efficiency of photo-generated holes are promoted. Hence, y-Fe2O3/CuO exhibits an enhanced photocurrent density of 13.40 mA cm-2 (1.9 times higher than y-Fe2O3). The photo corrosion resistance of CuO is dramatically increased with the tection of CuFe2O4, resulting in superior high chemical stability, i.e. 85% of the initial activity remains after a long-term test. CO 2023 Elsevier Inc. All rights reserved.
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