文献类型：期刊文献

英文题名：Deposition of crystalline C₃N₄ films via microwave plasma chemical vapour deposition

作者：Jiang, Jinchun; Cheng, Wenjuan; Zhang, Yang; Lan, Minbo; Zhu, Hesun; Shen, Dezhong

机构：[1]E China Univ Sci & Technol, Chem & Pharmaceut Inst, Shanghai 200237, Peoples R China;[2]E China Normal Univ, Dept Phys, Shanghai 200262, Peoples R China;[3]Tsing Hua Univ, Dept Chem, Inst Funct Crystal & Film, Beijing 100084, Peoples R China;[4]E China Univ Sci & Technol, Ctr Anal & Test, Shanghai 200237, Peoples R China

年份：2007

卷号：61

期号：11-12

起止页码：2243

外文期刊名：MATERIALS LETTERS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000246158300029)】；

语种：英文

外文关键词：C3N4 crystallites; MPCVD; thin films; microstructure

摘要：Crystalline carbon nitride films have been synthesized on polycrystalline Ni substrates by a microwave plasma chemical vapour deposition technique, using a mixture of N-2, CH4 and H-2 as precursor. Scanning electron microscopy shows that the film consisted of perfect crystals of short and long hexagonal bars, tetragonal bars and irregular particles. From the X-ray photoelectron spectroscopy (XPS) data, a maximum N/C ratio of 1.0 was achieved in the films. The XPS spectra of the film typically showed three peaks in the C 1 s core spectrum (centered at 284.78, 285.94, and 287.64 eV) and two peaks in the N 1s core level spectrum (centered at 398.35 and 400.01 eV). This indicates that there are two types of C-N bonds; N is bonded to sp(2)-or sp(3) -coordinated C atoms in the as-deposited film. The X-ray diffraction pattern indicates that the film is composed of alpha-, beta-, pseudocubic, graphitic C3N4 and an unidentified phase. A series of intense sharp Raman peaks were observed in the range of 100-1500 cm(-1). These peaks match well with the calculated Raman frequencies of alpha- and beta-(CN4)-N-3, revealing the formation of alpha- and beta-C3N4 phase. (c) 2006 Elsevier B.V. All rights reserved.