文献类型：期刊文献

中文题名：微加工厚光刻胶掩膜电镀工艺研究

英文题名：Research on thick photoresist mask electroplating process in micro-fabrication

作者：姜政[1];丁桂甫[1];汪红[1];黎莉[2]

机构：[1]上海交通大学微纳米科学技术研究院,上海200030;[2]华东理工大学高分子材料系,上海200237

年份：2005

卷号：24

期号：7

起止页码：16

中文期刊名：电镀与涂饰

外文期刊名：Electroplating & Finishing

收录：CSTPCD;;CSCD:【CSCD_E2011_2012】；

基金：国家高技术研究发展计划(863)项目(2004AA404260);国家自然科学基金资助项目(10377009)

语种：中文

中文关键词：微加工;光刻胶;掩膜;溢出电镀

外文关键词：micro-fabrication;photoresist;mask;extravasation electroplating

摘要：介绍了溢出电镀二次涂覆薄层光刻胶再光刻的工艺流程:磁控溅射法电镀种子层-涂覆光刻胶-溢出电镀-光刻胶二次涂覆-再光刻-电镀。电镜照片表明,通过此方法可以消除微加工过程中在光刻胶掩膜与电镀结构间产生的深沟壑,从而获得了平整性和连贯性良好的镀层。
The process flow of thin photoresist second-time coating then photoetching after extravasation electroplating was introduced as follows: seed film electroplating with magnetron sputtering-photoresist coating-extravasation electroplating-photoresist second-time coating-further photoetching-electroplating. The electron microscope photo shows that the deep ravine existing between photoresist mask and the structure of electroplating in micro-fabrication can be removed by using this technics. And the deposits of good flatness and continuity were gained.