文献类型：期刊文献

英文题名：Crystalline carbon nitride films prepared by microwave plasma chemical vapour deposition

作者：Jiang, Jinchun; Cheng, Wenjuan; Zhang, Yang; Zhu, Hesun; Shen, Dezhong

机构：[1]E China Univ Sci & Technol, Chem & Pharmaceut Inst, Shanghai 200237, Peoples R China;[2]E China Normal Univ, Dept Phys, Shanghai 200262, Peoples R China;[3]Tsing Hua Univ, Dept Chem, Inst Funct Crystal & Film, Beijing 100084, Peoples R China

年份：2006

卷号：41

期号：13

起止页码：4117

外文期刊名：JOURNAL OF MATERIALS SCIENCE

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000239282300018)】；

语种：英文

摘要：Crystalline carbon nitride films have been synthesized on Si (100) substrates by a microwave plasma chemical vapour deposition technique, using mixture of N-2, CH4 and H-2 as precursor. Scanning electron microscopy shows that the films consisted of hexagonal bars, tetragonal bars, rhombohedral bars, in which the bigger bar is about 20 mu m long and 6 pm wide. The X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded through hybridized sp(2) and sp(3) configurations. The x-ray diffraction pattern indicates that the films are composed of alpha-, ss-, pseuclocubic and cubic C3N4 phase and an unidentified phase. Raman spectra also support the existence of sigma- and ss-C3N4 phases. Vickers microhardness of about 41.9 GPa measured for the films. (c) 2006 Springer Science + Business Media, Inc.