文献类型：期刊文献

英文题名：Enhanced Dielectric Properties of Polyetherimide-Based Nanocomposite Films With Doped Semiconductor Traps

作者：Lin, Jingyu[1];Nie, Lingzhi[1];Yin, Wei[2];Zhang, Pengtu[1];Zuo, Peiyuan[1];Mi, Puke[1];Zhuang, Qixin[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Key Lab Adv Polymer Mat Shanghai, Shanghai, Peoples R China;[2]East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai, Peoples R China

年份：2025

卷号：36

期号：3

外文期刊名：POLYMERS FOR ADVANCED TECHNOLOGIES

收录：;EI(收录号：20251018020306);WOS:【SCI-EXPANDED(收录号:WOS:001436647500001)】；

基金：This work was supported by the National Natural Science Foundation of China (52373073, 52303083, 52073091, 22171086), the Shanghai Pujiang Program (22PJ1402500), the Shanghai Rising-Star Program (24QA2701800) and the Key Laboratory of Advanced Polymeric Materials of Shanghai.

语种：英文

外文关键词：band structure; dielectric; electron-hole pair; polyetherimide; ZnS1-xOx

摘要：The emerging electronic devices demand dielectric polymer films with high energy storage density over a wide temperature range. However, the mobility of charge carriers leads to unsatisfactory dielectric performance even for heat-resistant dielectric polymers such as polyetherimide (PEI). Therefore, to enhance the energy storage density of polymer dielectrics, it is critical to concurrently focus on increasing the dielectric constant and improving the breakdown strength by hindering the migration of electrons, which is highly correlated with the intrinsic bandgap structures of dielectrics. Inspired by the tunable bandgap structure of doped semiconductors, this work is aimed at strengthening the trapping of charge carriers depending on the construction of electron traps and the formation of electron-hole pairs, that is, to tailor the bandgap of ZnS1-xOx via oxygen doping and the band structure at the ZnS1-xOx/PEI interface region, thereby significantly enhancing the breakdown strength of the composite films. At room temperature and 450 kV mm(-1), the energy density (U-d) of 0.4 vol% ZnS0.7O0.3/PEI reaches 5.7 J cm(-3) with a charge-discharge efficiency (eta) of 96.6%, which is 2.3 times that of pure PEI (2.5 J cm(-3), eta = 86.2%). Moreover, the composite film exhibits excellent dielectric stability at high temperatures. At 150 degrees C and 350 kV mm(-1), the U-d remains 3.4 J cm(-3), with a high eta of 89.1%, significantly higher than that of pure PEI (1.5 J cm(-3), eta = 80.6%). This work provides a novel perspective for the design of high-performance dielectric composite films via interfacial engineering.