文献类型：期刊文献

中文题名：高分子忆阻材料的设计、制备和神经突触仿生研究进展

英文题名：Design,Preparation and Biological Synaptic Mimicking of Polymer Memoristive Materials

作者：汪诚[1];樊菲[1];张斌[1];陈彧[1]

机构：[1]华东理工大学化学与分子工程学院,教育部结构可控先进功能材料及其制备重点实验室,上海200237

年份：2016

卷号：29

期号：3

起止页码：239

中文期刊名：功能高分子学报

外文期刊名：Journal of Functional Polymers

收录：CSTPCD;;北大核心:【北大核心2014】；CSCD:【CSCD2015_2016】；

基金：国家自然科学基金重点基金(51333002);青年基金(21404037);教育部博士点基金(20120074110004);浦江人才计划(16PJ1402400);中央高校基金(WJ1514311)

语种：中文

中文关键词：高分子;忆阻器;存储技术

外文关键词：polymers;memristor;memory technology

摘要：自从1971年加州大学伯克利分校电子理论家蔡少棠教授提出忆阻器(又称"记忆电阻",第四种电路元件)假设后,引起了材料科学家和固体物理学家的极大的研究兴趣。作为一种在计算机数据存储和神经运行领域具有广泛潜在应用价值的非线性动态电子器件,其影响可以追溯到发明电阻器、电容器、电感器之前。与生物大脑的神经突触类似,忆阻器兼具记忆和逻辑运算的功能。本文综述了近年来高分子忆阻材料的合成和生物神经突触模拟研究进展。利用不同的前、后突触刺激可以模拟神经突触展现的一些诸如短期/长期可塑性(STP/LTP)、尖峰时间相关的可塑性(STDP)、穗率相关塑性(SRDP)和"学习-记忆-遗忘"等基本功能。大量研究结果已经表明:材料体系的电荷转移与传输、分子间弱相互作用、材料分子结构、聚集态结构、薄膜微结构和电输运特性等因素对材料忆阻效应有显著影响。
As promissing nonlinear dynamic electronic devices with widespread applications in computer data storage and neuromorphic implementations,memristor(also called"memory resistor"),which is a fourth circuit element with its effects predating the resistor,capacitor and inductor,has attracted tremendous attention in both materials science and condensed-matter physics since it was originally envisioned in 1971 by circuit theorist Leon Chua from UC-Berkley.Like the synapses of biological brains,memristors,which can learn from earlier impulses,combine the functions of memory and logic.In this review,we introduce the recent progress in the synthesis and biological synaptic mimicking of polymer memoristive materials.By using various pre-and postsynaptic spikes,the fundamental synaptic functions of short-term/long-term plasticity(STP/LTP),spike-timing dependent-plasticity(STDP),spike-rate dependent plasticity(SRDP)and"learning-memory-forget"experience can be mimicked in a polymer memoritive system.A larger number of experimental results have demonstrated that some important factors,including charge transfer and transport in materials,weak interaction between molecules,molecular structures and aggregation state structures of materials,microstructure of thin film,and electrical transport properties as well,have significant impact on the memristive switching performance of the resultant materials.