文献类型：期刊文献

英文题名：Microwave-hydrothermal in situ fabrication of porous NiO@SnO2 heterostructures: synergistic effects of p-n junction and oxygen vacancies for ultrafast hydrogen sensing

作者：Zhu, Ye[1];Hou, Ming[1];Yang, Li[1];Zhao, Qiuni[1];Ye, Xiaolei[1];Zhang, Shunping[2];Xia, Yi[1];Zhang, Guozhu[3];Guo, Shenghui[1]

机构：[1]Kunming Univ Sci & Technol, Sch Met & Energy Engn, State Key Lab Complex Nonferrous Met Resources Cle, Kunming 650093, Peoples R China;[2]Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, Wuhan 530074, Peoples R China;[3]East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai Key Lab Intelligent Sensing & Detect Tech, Shanghai 200237, Peoples R China

年份：2026

卷号：251

外文期刊名：VACUUM

收录：;EI(收录号：20261620535988);WOS:【SCI-EXPANDED(收录号:WOS:001747923900001)】；

基金：This work is supported by Yunnan Fundamental Research Projects (grant NO. 202401BE070001-005, 202501CF070183) , Natural Science Foundation of China (grant NO. 62501259) . The authors (Shenghui Guo, Yunling Scholar; Li Yang, Industrial Innovation Scholar) would like to acknowledge Yunnan Province Xingdian Talent Support Plan Project.

语种：英文

外文关键词：Hydrogen sensor; p-n junction; Oxygen vacancies; Gas-sensing mechanism; NiO@SnO2 heterostructures

摘要：A microwave-hydrothermal route was developed to fabricate porous NiO@SnO2 heterostructures with SnO2 nanoparticles embedded in NiO sheets. The optimized NiO@SnO2-2 (NiO:SnO2 = 1:2) exhibits outstanding H2 sensing performance at 300 degrees C, including a response time of 10 s (with an estimated uncertainty of +/- 1 s based on repeated measurements) to 9000 ppm H2, a high response of 90, excellent selectivity and stability. This enhanced performance stems from the synergistic effect of the p-n heterojunction and oxygen vacancies: the heterojunction enlarges the depletion layer while oxygen vacancies promote oxygen adsorption. Upon H2 exposure, reduction of adsorbed oxygen releases electrons, modulating sensor resistance. This work provides an effective strategy for developing high-performance gas sensors via heterointerface engineering.