文献类型：期刊文献

英文题名：POSS Polyimide Composite Sealed Triple-Junction GaAs Thin-Film Solar Cell for Long-Term Low Earth Orbit Serve

作者：Qian, Min[1];Wu, Min[2];Xuan, Xiaoyang[3];Gao, Yang[4]

机构：[1]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China;[2]Shanghai Inst Space Power Sources, State Key Lab Space Power sources Technol, Shanghai 200245, Peoples R China;[3]Taishan Univ, Coll Chem & Chem Engn, Tai An 271000, Shandong, Peoples R China;[4]East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai Key Lab Intelligent Sensing & Detect Tech, Shanghai 200237, Peoples R China

年份：2026

卷号：13

期号：12

外文期刊名：ADVANCED SCIENCE

收录：;EI(收录号：20255119735055);WOS:【SCI-EXPANDED(收录号:WOS:001638724400001)】；

基金：This work was sponsored by the Project supported by the Space Application System of China Manned Space Program, and the National Natural Science Foundation of China (Grant No. 12575275).

语种：英文

外文关键词：atomic oxygen; POSS polyimide; transmittance; triple-junction GaAs thin-film solar cell; ultraviolet

摘要：Polyhedral oligomeric silsesquioxane (POSS) polyimide is promising for sealing flexible photoelectronic devices for space applications. However, atomic oxygen interaction with POSS polyimide results in a porous SiOx passivating layer, ultraviolet interaction results in bonding degradation, both causing the transmittance decrease in the visible light range. In this study, the atomic oxygen exposure-induced transmittance decrease of POSS polyimide is explained and simulated by Rayleigh scattering. Ultrathin oxide films and ultraviolet absorbent are introduced to POSS polyimide by surface- and bulk-phase modifications to improve atomic oxygen and ultraviolet resistance, which achieves approximate to 0 wt% mass loss upon an eight-year long-term atomic oxygen exposure and is deduced by molecular dynamics. The atomic oxygen exposure effect on the sheet resistance of flexible conductive indium tin oxide-POSS polyimide is explained by band structure calculation. The SiO2-POSS polyimide sealed triple-junction GaAs thin-film solar cell exhibits beginning of life (BOL) and end of life (EOL) efficiencies of 27.67% and 23.38% upon an eight-year long-term to atomic oxygen. The atomic oxygen reactions with polyimide-based films are explained by zero- and first-order reactions, and predictive formulas are created for the film mass loss and sealed solar cell performance under the long-term atomic oxygen exposure. This study suggests a POSS polyimide composite as a packaging film for flexible photoelectronic devices in low Earth orbit.