详细信息
CFD Simulation of the Dosing Behavior within the Atomic Layer Deposition Feeding System ( SCI-EXPANDED收录 EI收录)
文献类型:期刊文献
英文题名:CFD Simulation of the Dosing Behavior within the Atomic Layer Deposition Feeding System
作者:Yuan, Yuchen[1];Ping, Huihui[1];Lee, Dennis T.[2,3];Corkery, Peter[2,3];Zhang, Zhen[4];Liu, Cui[4];Xue, Shuang-mei[5];Zhuang, Liwei[1];Tsapatsis, Michael[2,3,6]
机构:[1]East China Univ Sci & Technol, Sch Chem Engn, Shanghai 200237, Peoples R China;[2]Johns Hopkins Univ, Dept Chem & Biomol Engn, Baltimore, MD 21218 USA;[3]Johns Hopkins Univ, Inst NanoBio Technol, Baltimore, MD 21218 USA;[4]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[5]Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China;[6]Johns Hopkins Univ, Appl Phys Lab, Laurel, MD 20723 USA
年份:2023
卷号:62
期号:23
起止页码:9335
外文期刊名:INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
收录:;EI(收录号:20232614321270);WOS:【SCI-EXPANDED(收录号:WOS:001008119700001)】;
基金:This material is based upon work supported by the National Natural Science Foundation of China (22078091), Shanghai Pujiang Program (2022PJD016), and the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences and Biosciences under Award DE-SC0021212.
语种:英文
外文关键词:Computational fluid dynamics - Feeding - Flow of fluids - Materials handling equipment
摘要:The effective operation of atomiclayer deposition (ALD) feedingsystem is the premise of realizing specific ALD processes. In thepresent work, a detailed computational fluid dynamics (CFD) modelof the feeding system has been developed and validated, which accountsfor the roles of ALD valves and manifolds. A numerical simulationof the compressible fluid flow and heat/mass transfer within the feedingsystem was conducted. The dosing amounts and the spatiotemporal distributionsof the precursors can be accurately predicted using the CFD model,as validated by experimental results. Different precursors, operatingconditions, and structures of the feeding system were simulated andanalyzed to examine the operating flexibility of the feeding system.The simulation results can be adopted as the upstream boundary conditionsfor simulations of the ALD process in the reaction chamber. The substrate-scalesimulation indicates that the effect of the feeding system on thefilm deposition is highly related to the surface kinetics of ALD.The present work can serve as a guide for the development and optimizationof different ALD-based processes via proper operation and even thedesign of the feeding system.
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