文献类型：期刊文献

英文题名：Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure

作者：Sheng, Mingyuan[1];Chang, Xi[1];Mao, Xiaojun[1];Gao, Yang[2];Xuan, Xiaoyang[3];Xie, Haifen[1];Mu, Haichuan[1];Niu, Yueping[1];Gong, Shangqing[1,4,5];Qian, Min[1]

机构：[1]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai Key Lab Intelligent Sensing & Detect Tech, Shanghai 200237, Peoples R China;[3]Taishan Univ, Coll Chem & Chem Engn, Tai An 271000, Shandong, Peoples R China;[4]Shanghai Frontiers Sci Ctr Optogenet Tech Cell Met, Shanghai 200237, Peoples R China;[5]Shanghai Engn Res Ctr Hierarch Nanomat, Shanghai 200237, Peoples R China

年份：2024

卷号：10

期号：8

外文期刊名：ADVANCED ELECTRONIC MATERIALS

收录：;EI(收录号：20242316190188);WOS:【SCI-EXPANDED(收录号:WOS:001235295900001)】；

基金：This work was sponsored by the National Natural Science Foundation of China (Grant No. 61804054).

语种：英文

外文关键词：CVD growth; lateral heterostructure; photodetector; transfer; WS2/MoSe2

摘要：The heterostructure of two-dimensional transition metal dichalcogenide (TMDC) has garnered extensive attention, for the junction is the building block of a semiconductor device. However, the controllable synthesis of TMDC heterostructures of different transition metals and different chalcogen elements is still challenging because of the etching by atom substitution during the chemical vapor deposition (CVD) process. Here, a Mo & horbar;O transition state with lower energy is introduced to the edge of an as-grown MoSe2 by using ultraviolet ozone treatment, to prevent the fast atom substitution of S for Se, and enable a stable growth of WS2/MoSe2 lateral heterostructure. A polymer-free transfer method is developed based on capillary interaction, and atomic structure characterization confirms the high-quality WS2/MoSe2 lateral heterostructure. The WS2/MoSe2 lateral heterostructure photodetector exhibits superior photoresponse compared to WS2 and MoSe2 devices, with a responsivity of 21.87 A W-1 and a detectivity of 4.2 x 10(12) Jones at 350 nm. Kelvin probe force microscopy result reveals that the built-in electric field within the heterojunction facilitates the effective separation of photogenerated electron-hole pairs. This study carries profound implications for the CVD growth and polymer-free transfer of TMDC heterostructures in photodetector applications.