文献类型：期刊文献

英文题名：Conjugated-Polymer-Functionalized Graphene Oxide: Synthesis and Nonvolatile Rewritable Memory Effect

作者：Zhuang, Xiao-Dong[1];Chen, Yu[1];Liu, Gang[2];Li, Pei-Pei[1];Zhu, Chun-Xiang[3];Kang, En-Tang[2];Neoh, Koon-Gee[2];Zhang, Bin[1];Zhu, Jin-Hui[1];Li, Yong-Xi[1]

机构：[1]E China Univ Sci & Technol, Inst Appl Chem, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 119260, Singapore;[3]Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

年份：2010

卷号：22

期号：15

起止页码：1731

外文期刊名：ADVANCED MATERIALS

收录：;EI(收录号：20101712883401);WOS:【SCI-EXPANDED(收录号:WOS:000277369600005)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (20676034, 20876046), the Ministry of Education of China (309013), and the Shanghai Municipal Educational Commission for the Shuguang fellowship (08GG10) and the Shanghai Eastern Scholarship. Supporting Information is available online on Wiley InterScience or from the author.

语种：英文

外文关键词：Graphene - Indium compounds - Tin oxides

摘要：An ITO/TPAPAM-GO/Al memory device (see figure; ITO = indium tin oxide, TPAPAM-GO = graphene oxide covalently grafted with triphenylamine-based polyazomethine) exhibits typical bistable electrical switching and a nonvolatile rewritable memory effect with a turn-on voltage of -1.0 V and an ON/OFF-state current ratio of more than 10(3). Both ON and OFF state are stable under a constant voltage stress and survive up to 10(8) read cycles at a read voltage of -1.0 V.