文献类型：期刊文献

英文题名：Influence of annealing on thermoelectric properties of bismuth telluride films grown via radio frequency magnetron sputtering

作者：Huang, Hu[1];Luan, Wei-ling[1];Tu, Shan-tung[1]

机构：[1]E China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai 200237, Peoples R China

年份：2009

卷号：517

期号：13

起止页码：3731

外文期刊名：THIN SOLID FILMS

收录：;EI(收录号：20091612043408);WOS:【SCI-EXPANDED(收录号:WOS:000266148800021)】；

基金：This work was financially supported by the National Natural Science Fund of China with contract numbers of 50472046, Shanghai Shu'guang Project and Program of Shanghai Subject Chief Scientist with contract number of 06XD14207.

语种：英文

外文关键词：Bismuth telluride; Thermoelectric films; Radio frequency magnetron sputtering; Powder target; Annealing

摘要：Bismuth telluride films were prepared via radio frequency magnetron sputtering. Mixed powders with different composition were used as sputtering targets. Influence of the annealing temperature on surface topography, crystal structure and thermoelectric properties of the films has been investigated. It was found that the grain size increased and the surface roughness decreased with a rising annealing temperature. X-ray diffraction analysis revealed an improved crystallization after the annealing, and that crystal planes perpendicular to c-axis became prominent. High temperature treatments resulted in a decrease of Seebeck coefficient and an increase of electrical conductivity. The highest power factor was obtained after being annealed at 300 degrees C. (C) 2009 Published by Elsevier B.V.