文献类型：期刊文献

英文题名：In-Situ Surface Modification of ITO Substrate via Bio-Inspired Mussel Chemistry for Organic Memory Devices

作者：Gong, Minglei[1,2,3];Li, Wei[1,2];Fan, Fei[3];Chen, Yu[1,2];Zhang, Bin[1,2]

机构：[1]East China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, Sch Chem & Mol Engn, Joint Int Res Lab Precis Chem & Mol Engn, Shanghai 200237, Peoples R China;[3]Shanghai i Reader Biotech Co Ltd, Shanghai 201100, Peoples R China

年份：2022

卷号：7

期号：4

外文期刊名：BIOMIMETICS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000900521100001)】；

基金：This study was funded by the National Natural Science Foundation of China (51973061, 62004123), Shanghai Rising-Star Program (21QA1402100, 22QB1400900), and China Postdoctoral Science Foundation (2020M671118).

语种：英文

外文关键词：memory device; mussel chemistry; surface modification; SI-ATRP

摘要：The development of organic memory devices, regarding factors such as structure construction, principle exploration, and material design, has become a powerful supplement to traditional silicon-based information storage. The in-situ growth of materials on substrate surfaces can achieve closer bonding between materials and electrodes. Bio-inspired by mussel chemistry, polydopamine (PDA) was self-assembled on a flexible substrate as a connecting layer, and 2-bromoiso-butyryl bromide (BiBB) was utilized as an initiator for the polymerization of an iridium complex via surface-initiated atom-transfer radical polymerization (SI-ATRP). A device with the structure of Al/PDA-PPy3Ir/ITO was constructed after the deposition of aluminum. The device exhibited a nonvolatile rewritable memory characteristic with a turn-on voltage of -1.0 V and an ON/OFF current ratio of 6.3 x 10(3). In addition, the memory performance of the Al/PDA-PPy3Ir/ITO device remained stable at bending states due to the intrinsic flexibility of the active layer, which can be expanded into the establishment of flexible memory devices. Spectroscopy and electrochemical characterization suggested that the resistive memory properties of the device stemmed from charge transfer between PDA and iridium polymer in the active layer (PDA-PPy3Ir) under an applied voltage.