文献类型：期刊文献

英文题名：Study on the mechanism of aluminum nitride synthesis by chemical vapor deposition

作者：Li, Chunzhong[1]; Hu, Liming[1]; Yuan, Weikang[1]; Chen, Minheng[1]

机构：[1] East China Univ of Science and, Technology, Shanghai, China

年份：1997

卷号：47

期号：2-3

起止页码：273

外文期刊名：MATERIALS CHEMISTRY AND PHYSICS

收录：;EI(收录号：1997213590526);WOS:【SCI-EXPANDED(收录号:WOS:A1997WL76200026)】；

语种：英文

外文关键词：aluminum nitride; chemical vapor deposition; process mechanisms; synthesis; ultrafine particles

摘要：Ultrafine aluminum nitride particles were synthesized by chemical vapor deposition at 973-1273 K. Effects of reaction temperature, gas total how rate, aluminum chloride concentration on aluminum nitride particle morphology and particle size distribution were studied. The mechanism of the reaction between aluminum chloride and ammonia and the mechanisms for homogeneous formation of aluminum nitride particles and growth of aluminum nitride film by surface reactions were investigated.