详细信息
In situ growth of TiO2 nanocrystals on g-C3N4 for enhanced photocatalytic performance ( SCI-EXPANDED收录)
文献类型:期刊文献
英文题名:In situ growth of TiO2 nanocrystals on g-C3N4 for enhanced photocatalytic performance
作者:Li, Hong[1];Zhou, Liang[2];Wang, Lingzhi[1];Liu, Yongdi[2];Lei, Juying[2];Zhang, Jinlong[1]
机构:[1]E China Univ Sci & Technol, Key Lab Adv Mat & Inst Fine Chem, Shanghai 200237, Peoples R China;[2]E China Univ Sci & Technol, State Environm Protect Key Lab Environm Risk Asse, Shanghai 200237, Peoples R China
年份:2015
卷号:17
期号:26
起止页码:17406
外文期刊名:PHYSICAL CHEMISTRY CHEMICAL PHYSICS
收录:;WOS:【SCI-EXPANDED(收录号:WOS:000356874000085)】;
基金:This work was financially supported by the National Natural Science Foundation of China (21407049, 21377038, 21237003 and 21173077), the Fundamental Research Funds for the Central Universities (222201314045), China Postdoctoral Science Foundation (2013M540339), and Shanghai Pujiang Program (14PJ1402100).
语种:英文
摘要:Well dispersed TiO2 nanocrystals with (001) facets were successfully grown in situ on g-C3N4 through a facial solvothermal method. The resultant TiO2/g-C3N4 composites exhibit remarkably higher efficiency for photocatalytic degradation of phenol as compared to pure catalysts (g-C3N4 or TiO2) or mechanically mixed TiO2/g-C3N4. The optimal composite with 11.2 wt% TiO2 showed the highest degradation rate constant, which is 2.8 times that of pure g-C3N4, 2.2 times that of pure TiO2, and 1.4 times that of mechanically mixed TiO2/g-C3N4. The enhanced photocatalytic activity is mainly attributed to the effective charge separation derived from two aspects: (1) well matched energy levels between TiO2 and g-C3N4 and (2) a uniform and close contact between TiO2 and g-C3N4 that resulted from the in situ growth of highly dispersed TiO2 nanocrystals. The TiO2/g-C3N4 hybrid material prepared in this study is expected to provide a good foundation for the further design and synthesis of advanced TiO2/g-C3N4-based functional materials, and the in situ growth method developed is hopeful to provide a new strategy for the synthesis of other semiconductor-modified g-C3N4 materials.
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