文献类型：期刊文献

英文题名：Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS2 nanosheets for nonvolatile rewritable memory devices

作者：Fan, Fei[1];Zhang, Bin[1];Cao, Yaming[1];Chen, Yu[1]

机构：[1]East China Univ Sci & Technol, Inst Appl Chem, Key Lab Adv Mat, 130 Meilong Rd, Shanghai 200237, Peoples R China

年份：2017

卷号：9

期号：7

起止页码：2449

外文期刊名：NANOSCALE

收录：;EI(收录号：20170803374241);WOS:【SCI-EXPANDED(收录号:WOS:000395692400007)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (51333002, 21404037), the Research Fund for the Doctoral Program of Higher Education of China (20120074110004), the Fundamental Research Funds for the Central Universities (WJ1514311), and the Chenguang Program (15CG28).

语种：英文

外文关键词：Charge transfer - Layered semiconductors - Nanosheets - Nonvolatile storage - Current voltage characteristics - Gold compounds

摘要：A novel nonvolatile rewritable memory device based on the soluble poly(N-vinylcarbazole)-chemically modified MoS2 nanosheets (MoS2-PVK) was fabricated with the configuration of Au/MoS2-PVK/ITO. This is the first example of polymer covalently modified MoS2 nanosheet-based memory devices. As expected, this device exhibited a typical storage performance of nonvolatile rewritable memory, with a turn-on voltage of -1.54 V and an ON/OFF current ratio of 4 x 10(2). After annealing at 80 degrees C for 1 h under a nitrogen atmosphere, a high ON/OFF current ratio (up to 3 x 10(4)) and a lower turn-on voltage (-1.31 V), which are among the best reported for MoS2-based polymer/organic memory devices, were achieved due to enhanced crystallization of PVK, which induced a more efficient intramolecular charge transfer effect between PVK and MoS2 during the annealing process. The effect of film thickness on the current-voltage characteristics of the MoS2-PVK-based devices and the memory performance of the MoS2/PVK blends-based devices have also been explored.