文献类型：期刊文献

英文题名：Electron beam induced deposition of silicon nanostructures from a liquid phase precursor

作者：Liu, Yin[1];Chen, Xin[2];Noh, Kyong Wook[3];Dillon, Shen J.[1]

机构：[1]Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA;[2]E China Univ Sci & Technol, Key Lab Ultrafine Mat, Sch Mat Sci & Engn, Minist Educ,Shanghai Key Lab Adv Polymer Mat, Shanghai 200237, Peoples R China;[3]Univ Illinois, Dept Chem & Biomol Engn, Urbana, IL 61801 USA

年份：2012

卷号：23

期号：38

外文期刊名：NANOTECHNOLOGY

收录：;EI(收录号：20123815447633);WOS:【SCI-EXPANDED(收录号:WOS:000308813100009)】；

基金：The authors are grateful for funding provided by the US Department of Energy, Basic Energy Sciences (Contract No. DE-SC0006509). The experiments were carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which are partially supported by the US Department of Energy under grants DE-FG02-07ER46453 and DE-FG02-07ER46471.

语种：英文

外文关键词：Chlorine compounds - Liquids - Scanning electron microscopy - Transmission electron microscopy - Deposition - Nanostructures - Electron beams - Electrons - Silicon compounds

摘要：This work demonstrates electron beam induced deposition of silicon from a SiCl4 liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.