详细信息

Deterministic Reshaping of Breath Figure Arrays by Directional Photomanipulation  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Deterministic Reshaping of Breath Figure Arrays by Directional Photomanipulation

作者:Wang, Wei[1];Yao, Yuan[1];Luo, Tianchan[2];Chen, Lingzhi[1];Lin, Jiaping[1];Li, Lei[2];Lin, Shaoliang[1]

机构:[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai Key Lab Adv Polymer Mat, Key Lab Ultrafine Mat,Minist Educ, Shanghai 200237, Peoples R China;[2]Xiamen Univ, Coll Mat, Xiamen 621005, Peoples R China

年份:2017

卷号:9

期号:4

起止页码:4223

外文期刊名:ACS APPLIED MATERIALS & INTERFACES

收录:;EI(收录号:20170603334630);WOS:【SCI-EXPANDED(收录号:WOS:000393355900108)】;

基金:This work was supported by National Natural Science Foundation of China (51622301, 51573046, 51573088, 51373143, and 21674087) and the Natural Science Foundation of Fujian Province (No. 2014J0105). Support from Projects of Shanghai Municipality (14SG29) and Fundamental Research Funds for the Central Universities (B14018 and WD1213002) is also appreciated.

语种:英文

外文关键词:self-assembly; porous films; block copolymers; azobenzene; photomanipulation

摘要:The fabrication of desired structures is one of the most urgent topics in current research on porous polymer films. Herein, directional photomanipulation in conjunction with breath figure processing has been demonstrated for the preparation of porous polymeric films with finely tunable pore shape and size. Because of the photoinduced directional mass migration of azobenzene units upon vertical incident linearly polarized light (LPL) irradiation, round pores on honeycomb films can be reshaped into multifarious shapes including rectangle, rhombus, dumbbell, line, and so forth. In addition, slantwise LPL irradiation produces unique asymmetrical structure inside the pores oriented along the polarized direction. On the other hand, circularly polarized light (CPL) irradiation affords manipulation of the wall thickness without changing the pore shape. This versatile directional photomanipulation method can be implemented to large-area and high-throughput reshaping processes, which paves the way to a number of promising applications such as a flexible etching mask for patterning.

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