文献类型：期刊文献

英文题名：Manipulation of transient electroluminescence spike induced by polar Alq3 electron transport layer

作者：Xu, Sinuo[1];Lu, Zhaoyue[1];Xiao, Jing[2];Xie, Haifen[1];Mu, Haichuan[1]

机构：[1]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China;[2]Taishan Univ, Phys & Elect Engn Coll, Tai An 271021, Shandong, Peoples R China

年份：2025

卷号：714

外文期刊名：PHYSICA B-CONDENSED MATTER

收录：;EI(收录号：20252218515511);WOS:【SCI-EXPANDED(收录号:WOS:001502406500001)】；

基金：This work was financially supported by the National Natural Science Foundation of China (No. 62374112) and the Natural Science Founda-tion of Shandong Province (No. ZR2022MF271) .

语种：英文

外文关键词：Organic light-emitting diode; Spontaneous orientation polarization; Transient electroluminescence; Permanent dipole moment

摘要：The electroluminescence (EL) performance of tris-(8-hydroxyquinolate) aluminum (Alq3)-based organic light-emitting diodes (OLEDs) and the associated interfacial charge behaviors are comprehensively investigated using transient EL measurements. The transient EL decay reveals that no spike is observed at the end of the positive bias, but an overshoot appears at the onset of reverse bias. The spike at the failing edge is suppressed by the large spontaneous orientation polarization (SOP) of Alq3, while the overshoot under reverse bias is attributed to the de-trapping and recombination of accumulated interfacial charges. The intensity of overshoot in transient EL decay strongly correlates with the quantity of interfacial charges, which can be manipulated through controlled deposition parameters, such as film thickness, substrate temperature, and deposition rate. To optimize device performance, a critical thickness and substrate temperature should be maintained during polar Alq3 deposition. These findings highlight the critical role of SOP regulation in maximizing OLED performance.