详细信息
Low-temperature processed In2S3 electron transport layer for efficient hybrid perovskite solar cells ( SCI-EXPANDED收录 EI收录)
文献类型:期刊文献
英文题名:Low-temperature processed In2S3 electron transport layer for efficient hybrid perovskite solar cells
作者:Hou, Yu[1,2];Chen, Xiao[1];Yang, Shuang[1];Zhong, Yu Lin[2];Li, Chunzhong[1];Zhao, Huijun[2];Yang, Hua Gui[1]
机构:[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Ultrafine Mat, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]Griffith Univ, Ctr Clean Environm & Energy, Gold Coast Campus, Southport, Qld 4222, Australia
年份:2017
卷号:36
起止页码:102
外文期刊名:NANO ENERGY
收录:;EI(收录号:20171703596031);WOS:【SCI-EXPANDED(收录号:WOS:000402704000012)】;
基金:This work was financially supported by National Natural Science Foundation of China (21373083, 21573068 and 51602103), SRF for ROCS, SEM, SRFDP, Fundamental Research Funds for the Central Universities (WD1514301), China Postdoctoral Science Foundation Funded Project (2015M581547, 2016T90342), "Chen Guang" Project supported by Shanghai Municipal Education Commission and Shanghai Education Development Foundation (15CG26), the Major Research plan of the National Natural Science Foundation of China (91534202), 111 Project (B14018), Shanghai Sailing Program (16YF1402100) and ARC Discovery Projects (DP150103775).
语种:英文
外文关键词:Indium sulfide; Electron transport layer; Perovskite solar cell; Charge management
摘要:As a new generation of photovoltaics, perovskite solar cells (PSCs) have been intensively studies in recent years due to their high-efficiency, low-cost and ease of fabrication. For a typical high-performance PSC, electron transport layer (ETL) plays an important role in selectively extracting and transporting photo-generated electrons from perovskite to the electrode. In this paper, for the first time, we found that a well-organized In2S3 nanoflakes array can be used in PSCs with a high power conversion efficiency (PCE) of 18.22% with less hysteresis. In comparison, PSCs based on TiO2 ETL showed a much lower PCE of 15.70%. Experimental results clearly illustrate that the optimized band structure, enhanced light tapping and low recombination of photo-generated carriers in In2S3 ETL based devices leads to this enhanced performance. Noteworthily, such In2S3 ETLs are simple and solution processable at low-temperature (<= 80 degrees C), which might provide new avenue for low-cost and solution-processed photovoltaics.
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