详细信息
The photovoltaic properties of novel narrow band gap Cu2SnS3 films prepared by a spray pyrolysis method ( SCI-EXPANDED收录 EI收录)
文献类型:期刊文献
英文题名:The photovoltaic properties of novel narrow band gap Cu2SnS3 films prepared by a spray pyrolysis method
作者:Jia, Zhen[1];Chen, Qinmiao[2];Chen, Jin[1,2];Wang, Tingting[1];Li, Zhenqing[1];Dou, Xiaoming[1,2]
机构:[1]Univ Shanghai Sci & Technol, Sch Opt Elect & Comp Engn, Shanghai Key Lab Modern Opt Syst, Shanghai 200093, Peoples R China;[2]E China Univ Sci & Technol, Coll Sci, Dept Phys, Shanghai 200237, Peoples R China
年份:2015
卷号:5
期号:37
起止页码:28885
外文期刊名:RSC ADVANCES
收录:;EI(收录号:20151500727752);WOS:【SCI-EXPANDED(收录号:WOS:000352091600007)】;
基金:The project was supported by the Fundamental Research Funds for the Central Universities, China (no. WM1414047); Shanghai Committee of Science and Technology, China (no. 13JC1404300); Foundation for The Youth Scholars of Shanghai Municipal Education Commission, China (no. ZZSLG13013); Teachers' Innovation Ability Construction of University of Shanghai for Science and Technology, China (no. GDCX-Y-1205); Innovation Fund Project For Graduate Student of Shanghai, China (no. JWCXSL1301).
语种:英文
外文关键词:Optical data processing - X ray diffraction - Energy dispersive spectroscopy - Energy gap - Film preparation - Copper - Spray pyrolysis - Thin film solar cells - Tin compounds - Copper compounds
摘要:The ternary compound Cu2SnS3 (CTS) was fabricated by a spray pyrolysis method. The influence of the Cu precursor concentration and substrate temperature on the properties of the prepared films was investigated in detail. X-ray diffraction spectroscopy & Raman spectroscopy, energy dispersive spectroscopy, UV-vis spectrophotometry, Four-probe Resistivity Testing and Stylus Profilometry were employed for the analysis of the structural, compositional, optical, electrical and morphological properties of the prepared CTS thin films. The characterization results showed that the CTS thin film fabricated under optimal conditions (substrate temperature 350 degrees C, Cu concentration 0.02 M) had an atomic ratio of Cu1.43SnS2.59, and presented as a tetragonal structure with preferential (1, 1, 2) orientation. Optical measurements showed that the thin film had a high absorption coefficient (>10(4) cm(-1)) with a band gap value of 1.16 eV. The resistivity of the sprayed CTS thin film was 11.6 x 10(-2) Omega cm. All these properties indicated that the as-fabricated CTS thin film could be a promising absorber layer material for high efficiency thin film solar cells.
参考文献:
正在载入数据...
