文献类型：期刊文献

英文题名：In Situ Synthesis and Nonvolatile Rewritable-Memory Effect of Polyaniline-Functionalized Graphene Oxide

作者：Zhang, Bin[1,2];Chen, Yu[1,5];Ren, Yujie[3];Xu, Li-Qun[2];Liu, Gang[2];Kang, En-Tang[2];Wang, Cheng[1];Zhu, Chun-Xiang[4];Neoh, Koon-Gee[2]

机构：[1]E China Univ Sci & Technol, Inst Appl Chem, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 119260, Singapore;[3]Shanghai Inst Technol, Sch Chem & Environm Engn, Shanghai 201418, Peoples R China;[4]Natl Univ Singapore, SNDL, Dept Elect & Comp Engn, Singapore 119260, Singapore;[5]Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

年份：2013

卷号：19

期号：20

起止页码：6265

外文期刊名：CHEMISTRY-A EUROPEAN JOURNAL

收录：;EI(收录号：20132016325815);WOS:【SCI-EXPANDED(收录号:WOS:000318365200014)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (21074034), the Fundamental Research Funds for the Central Universities, and the State Key Laboratory of ASIC & System of Fudan University (11KF007).

语种：英文

外文关键词：density functional calculations; electronic structure; graphene; rewritable-memory effect; synthetic methods

摘要：A new polyaniline (PANI)-functionalized graphene oxide (GO-PANI) was prepared by using an in situ oxidative graft polymerization of aniline on the surface of GO. Its highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO), ionization potential (IP), and electron affinity (EA) values experimentally estimated by the onset of the redox potentials were 5.33, 3.57, 5.59, and 3.83eV, respectively. A bistable electrical-switching effect was observed in electronic device with the GO-PANI film sandwiched between the indium tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, the low-conductivity (OFF) state and the high-conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep, and can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of 1V for 3h and 108 read cycles at 1V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. An ON/OFF current ratio of more than 104 at 1V achieved in this memory device is high enough to promise a low misreading rate through the precise control of the ON and OFF states. The mechanism associated with the memory effects was elucidated from molecular simulation results.