详细信息

Activation of polyimide by oxygen plasma for atomic layer deposition of highly compact titanium oxide coating  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Activation of polyimide by oxygen plasma for atomic layer deposition of highly compact titanium oxide coating

作者:Yan, Chi[1];Tong, Hua[1];Liu, Cui[1];Ye, Xiaojun[1];Yuan, Xiao[1];Xu, Jiahui[1];Li, Hongbo[1]

机构:[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China

年份:2024

卷号:35

期号:26

外文期刊名:NANOTECHNOLOGY

收录:;EI(收录号:20241515913392);WOS:【SCI-EXPANDED(收录号:WOS:001198889600001)】;

基金:This work was financed by the Science and Technology Commission of Shanghai Municipality, China [Grant No. 21DZ1205700]. The author would like to thank the Shanghai Space Power Research Institute for its support in ground-based atomic oxygen experiments.

语种:英文

外文关键词:polyimide; TiO2 coating; atomic layer deposition (ALD); activation; atomic oxygen

摘要:Titanium oxide (TiO2) coated polyimide has broad application prospects under extreme conditions. In order to obtain a high-quality ultra-thin TiO2 coating on polyimide by atomic layer deposition (ALD), the polyimide was activated by in situ oxygen plasma. It was found that a large number of polar oxygen functional groups, such as carboxyl, were generated on the surface of the activated polyimide, which can significantly promote the preparation of TiO2 coating by ALD. The nucleation and growth of TiO2 were studied by x-ray photoelectron spectroscopy monitoring and scanning electron microscopy observation. On the polyimide activated by oxygen plasma, the size of TiO2 nuclei decreased and the quantity of TiO2 nuclei increased, resulting in the growth of a highly uniform and dense TiO2 coating. This coating exhibited excellent resistance to atomic oxygen. When exposed to 3.5 x 10(21) atom cm(-2) atomic oxygen flux, the erosion yield of the polyimide coated with 100 ALD cycles of TiO2 was as low as 3.0 x 10(-25) cm(3)/atom, which is one order less than that of the standard POLYIMIDE-ref Kapton (R) film.

参考文献:

正在载入数据...

版权所有©华东理工大学 重庆维普资讯有限公司 渝B2-20050021-7 
渝公网安备 50019002500408号 违法和不良信息举报中心