详细信息
Si_3N_4超微粒的RF-CVD合成及其介电性质
SYNTHESIS OF Si_3N_4 ULTRAFINE POWDER BY RF-CVD PROCESS AND ITS DIELECTRIC PROPERTIES
文献类型:期刊文献
中文题名:Si_3N_4超微粒的RF-CVD合成及其介电性质
英文题名:SYNTHESIS OF Si_3N_4 ULTRAFINE POWDER BY RF-CVD PROCESS AND ITS DIELECTRIC PROPERTIES
作者:朱以华[1];朱宏杰[1];韩今依[1];李春忠[1];胡黎明[1]
机构:[1]华东理工大学技术化学物理研究所,国家超细粉末工程研究中心
年份:1996
卷号:24
期号:3
起止页码:278
中文期刊名:硅酸盐学报
外文期刊名:Journal of The Chinese Ceramic Society
收录:CSTPCD;;Scopus;北大核心:【北大核心1992】;CSCD:【CSCD2011_2012】;
基金:国家自然科学基金
语种:中文
中文关键词:等离子体;化学气相淀积;氮化硅;超微粒;介电性质
外文关键词:s: plasma,CVD,silicon nitride, ultrafine powders,dielectric properties
摘要:利用自制的RF-CVD装置合成了Si_3N_4超微粒。着重考察了反应气混合方式对反应机理、化学含量、粒子形态及凝聚结构的影响。得到的Si_3N_4粒子的典型尺寸为10~50nm,并且凝聚形成分形结构,其对应不同反应温度合成的粒子的分形维数约在2.15到1.74之间。非晶Si_3N_4超微粒经1GPa高压压制,可看成是Si_3N_4粒子和界面空隙组成的多相复合材料,它的异常介电性质能够用多相材料性质的逾渗理论得到解释。
Si_3N_4 ultrafine powder was synthesized by our own RF-CVD. The effects of the reactant mixing patterns on the reaction mechanism,chemical content, particle morphology and aggregate structure were investi gated mainly. The obtained Si_3N_4 particles have typical size in the range of 10~50nm, aggregating to form a frac tal structure. The fractal dimensions of those reacting at different temperatures are in the range of 2.15 to 1. 74.Amorphous Si3N4 ultrafine powder after compression with 1GPa can ha considered as a heterogeneous composite of Si3N4 particles and porous interface. Its specific dielectric properties can be interpreted by the percolation theory for properties of heterogeneous materials.
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