文献类型：期刊文献

英文题名：Amorphous TiO2 Buffer Layer Boosts Efficiency of Quantum Dot Sensitized Solar Cells to over 9%

作者：Ren, Zhenwei[1];Wang, Jin[1];Pan, Zhenxiao[1];Zhao, Ke[1];Zhang, Hua[1];Li, Yan[1];Zhao, Yixin[2];Mora-Sero, Ivan[3];Bisquert, Juan[3,4];Zhong, Xinhua[1]

机构：[1]E China Univ Sci & Technol, Inst Appl Chem, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]Shanghai Jiao Tong Univ, Sch Environm Sci & Engn, Shanghai 200240, Peoples R China;[3]Univ Jaume 1, Inst Adv Mat INAM, Castellon de La Plana 12006, Spain;[4]King Abdulaziz Univ, Fac Sci, Dept Chem, Jeddah 21413, Saudi Arabia

年份：2015

卷号：27

期号：24

起止页码：8398

外文期刊名：CHEMISTRY OF MATERIALS

收录：;EI(收录号：20155301739161);WOS:【SCI-EXPANDED(收录号:WOS:000367562000027)】；

基金：This research is supported by the National Natural Science Foundation of China (nos. 91433106, 21421004), the Fundamental Research Funds for the Central Universities in China, and the Generalitat Valenciana Project (PROMETEO/2014/020).

语种：英文

外文关键词：Open circuit voltage - Titanium dioxide - Chlorine compounds - Electrodes - II-VI semiconductors - Semiconductor quantum dots - Silicon compounds - Solar cells - Tellurium compounds - Nanocrystals - Quantum efficiency - Selenium compounds

摘要：Charge recombination at an electrode/electrolyte interface is the main factor to limit the power conversion efficiency (PCE) of quantum dot sensitized solar cells (QDSCs). Herein, we present a novel and facile strategy based on successive coating of a sensitized electrode with a combination of blocking layers in appropriate sequence for suppressing the charge recombination. In this scenario, modification of the exposed surface of both TiO2 particles and QDs with an amorphous TiO2 (am-TiO2) layer via a classical TiCl4 hydrolysis treatment plays a fundamental role to enhance the effectiveness of a recombination blocking ZnS/SiO2 barrier layer. This strategy allows construction of CdSe0.65Te0.35 QD based champion QDSCs exhibiting a new PCE record of 9.28% and a certified PCE of 9.01% under full one sun illumination. The specific nature and sequence of the layering process is critical for the gain of photovoltaic performance. Control experiments indicate that the am-TiO2 is superior to a crystalline TiO2 layer in serving as the passivation/buffer layer and improving the photovoltaic performance of the cells. Insight from impedance spectroscopy (IS) and open circuit voltage decay (OCVD) measurements demonstrates that when the am-TiO2 layer is located at the interface between the QD sensitized photoanode and the ZnS/SiO2 barrier layer, it inhibits remarkably the charge recombination at the photoanode/electrolyte interface and prolongs the electron lifetime.