文献类型：期刊文献

英文题名：Macroscopic Study on Current Transport Path in Front-Side Contacts of Crystalline Silicon Solar Cells

作者：Xiong, Shenghu[1];Yuan, Xiao[1];Yang, Yunxia[1];Zhang, Jiefeng[1];Tong, Hua[1];Liu, Cui[1];Ye, Xiaojun[1];Li, Shengyong[1];Luo, Lan[2];Wang, Xianhao[3]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200131, Peoples R China;[3]Carle Zeiss Shanghai Co Ltd, Res Microscopy Solut Dept, Shanghai 200131, Peoples R China

年份：2019

卷号：216

期号：23

外文期刊名：PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

收录：;EI(收录号：20194407606303);WOS:【SCI-EXPANDED(收录号:WOS:000490964800001)】；

基金：This study was supported by the National High Technology Research and Development Program of China (grant no. 2014AA052101).

语种：英文

外文关键词：contact-end voltages; contact resistivities; current transport paths; solar cell metallization; transfer lengths

摘要：Double rectangular transmission line model and contact-end voltage measurement are used to study the variation in sheet resistance and current transfer length of the contact interface between the front-side electrode and the emitter of crystalline silicon solar cells during metallization. The current distribution and its relationship with the sheet resistances of the electrode, contact interface, and emitter are given at the macrolevel. The model shows that the current flows transversely for approximate to 50-500 mu m in the highly conductive interface with a sheet resistance in the range of 0.5-5 omega (-1) beneath the designed electrodes. The I-V curves beneath the front silver pad sintered at lower, optimum, and over-fired temperatures are always linear. However, they are nonlinear between the front-side and rear-side electrodes of the double phosphorus-doped N-type silicon substrates, which suggests that the contact type changes from Ohmic to Schottky. The experimental results imply that the photogenerated current on the emitter surface is mainly transferred transversely via the crystallites embedded in the shallow highly doped silicon layer rather than the deeper lightly doped contact area at the contact interface.