文献类型：期刊文献

中文题名：无机EL显示器件用高性能介电层的研究

英文题名：High performance dielectric layer for inorganic thin film electroluminescent devices

作者：肖田[1];林明通[1];徐毅[2];陈晨曦[2];陈国荣[1];杨云霞[1]

机构：[1]华东理工大学材料科学与工程学院,上海200237;[2]上海广电电子股份有限公司,上海200081

年份：2006

卷号：12

期号：2

起止页码：99

中文期刊名：功能材料与器件学报

外文期刊名：Journal of Functional Materials and Devices

收录：CSTPCD;;EI(收录号：2006219898163);Scopus;北大核心:【北大核心2004】；CSCD:【CSCD_E2011_2012】；

语种：中文

中文关键词：无机EL;SrTiO3薄膜;Ta2O5薄膜;SrTiO3/Ta2O5复合膜

外文关键词：inorganic EL; SrTiO3 thin film;Ta2O5 thin film; SrTiO3/Ta2O5 stacked layer

摘要：用rf和反应磁控溅射法成功制备了一种总厚度为530～730nm的SrTiO3／Ta2O5复合介电层，获得在500Hz下介电常数为48～73，反映介电损耗的参数△Vy在0．06～0．15V之间，击穿场强为106～139MV／m，在0．05V／nm的电场下正、反向漏电流在10^-9～10^-7A／cm^2之间，品质因子（εrεoEb）大于5μc／cm^2。同时比较了SrTiO3／Ta2O5复合介电层和SrTiJO3和Ta2O5单层薄膜的介电性能。把复合膜应用于以ZnS：Mn和Zn2Si0.5Ge0.5O4：Mn为发光材料的器件中，获得了适当的阈值电压和较高的亮度。
SrTiO3/Ta2O5 doubly stacked dielectric layers with a total thickness of 530 nm to 730 nm were prepared by if and dc reactive magnetron sputtering. The relative dielectric constant was measured to be 48 to 73 and the △Vy which reflects the loss tangent ranges from 0.06 V to 0.15 V at 500 Hz. The breakdown field strength is between 106 MV/m and 139 MV/m. The forward and reverse leakage current density is between 10^-9 A/cm2^ and 10^-7 A/cm^2 at an applied field of 0.05 V/nm, and the figure of merit is higher than 5 μc/cm^2. The dielectric properties of the doubly stacked dielectric layers are also compared with single SrTiO3 and Ta205 thin films. The doubly stacked dielectric layers were applied to the inorganic TFEL devices with ZnS： Mn and ZnESi0.5Ge0.5O4 ： Mn thin film phosphor. And suitable threshold voltage and high luminance are achieved.