文献类型：期刊文献

中文题名：溅射工艺参数对Ba_(0.5)Sr_(0.5)TiO_3薄膜沉积速率和介电性能的影响

英文题名：Effect of sputtering process on deposition rate and dielectrical properties of Ba_(0.5)Sr_(0.5)TiO_3 thin films

作者：林明通[1];陈国荣[1];杨云霞[1];肖田[2];楼均辉[2]

机构：[1]华东理工大学材料科学与工程学院,上海200237;[2]上海广电电子股份有限公司平板中心,上海200081

年份：2005

卷号：42

期号：6

起止页码：39

中文期刊名：真空

外文期刊名：Vacuum

收录：CSTPCD;;北大核心:【北大核心2004】；

语种：中文

中文关键词：射频磁控溅射;Ba0.5Sr0.5TiO3薄膜;沉积速率;介电常数;击穿场强;品质因子

外文关键词：radio frequency magnetron sputter; Ba0.5Sr0.5TiO3 thin film; deposition rate; dielectric constant; break-down field strength; figure of merit

摘要：铁电/介电BST(B axS r1-xT iO3)薄膜在微电子学、集成光学和光电子学等新技术领域有广泛的应用前景。用射频磁控溅射方法制备了厚约700 nm的B a0.5S r0.5T iO3薄膜,采用A l/BST/ITO结构研究了溅射功率、溅射气压、O2/(A r+O2)比和基片温度对上述BST薄膜沉积速率和介电性能的影响,并根据这些结果分析了较优的工艺条件,同时用XRD、XPS和SEM研究了薄膜的晶相、组成和显微结构。
Ferroelectric/dielectric BST（BaxSr1-xTiO3）thin films have broadly prospective applications in new technology fields, such as microelectronics, integrated optics and photo electronics. The Ba0.5Sr0.5TiO3 thin films about 700 nm thick were prepared by rf magnetron sputtering process, using an Al/BST/ITO architecture to investigate the impact of sputtering power, gas pressure, O2/（Ar＋O2） ratio and substrate temperature on the deposition rate and dielectric properties of the BST thin films. An optimal process was thus concluded from the investigation results with XRD, XPS and SEM used to analyze the crystalline phase, composition and microstructure of the films deposited by the optimum process.