详细信息

红外低发射率ATO粉末的制备及其特性研究    

Preparation and Characterization study of Antimony Doped Tin Oxide with Low Infrared Emissivity

文献类型:期刊文献

中文题名:红外低发射率ATO粉末的制备及其特性研究

英文题名:Preparation and Characterization study of Antimony Doped Tin Oxide with Low Infrared Emissivity

作者:宋兴华[1];於定华[1];马新胜[1];汪中进[1]

机构:[1]华东理工大学国家超细粉末工程研究中心,上海200237

年份:2003

卷号:25

期号:6

起止页码:49

中文期刊名:红外技术

外文期刊名:Infrared Technology

收录:CSTPCD;;北大核心:【北大核心2000】;CSCD:【CSCD_E2011_2012】;

语种:中文

中文关键词:ATO;红外发射率;化学共沉淀法;粉末电阻;高温烧结;载流子浓度;掺锑二氧化锡

外文关键词:ATO, IR emissivity, carrier concentration, p owder resistivity

摘要:ATO是一种优良的半导体材料 ,具有较低的红外发射率 ,可制成红外迷彩涂层 ,应用到军事领域。采用化学共沉淀法制备了低发射率的ATO粉末 ,并和特定的粘结剂制得了ATO涂层 ,测得了涂层的发射率和粉末的电阻 ,考察了影响涂层发射率和粉末电阻的因素 ,并对高温烧结的ATO粉末的粒径。
ATO is a good semiconductor with advantageous pr op erties.Due to its low infrared emissivity,it can be made into infrared camouflag e coatings for military purposes.In this research,low emissivity ATO powders are prepared by chemical coprecipition and their infrared emissivity and resistivit y are measured.The factors to influence the emissivity of ATO powders are invest igated and the characteristics of the partical size and partical conformation ar e studied.

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