文献类型：期刊文献

英文题名：Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex

作者：Liu, Gang[2];Zhuang, Xiaodong[1];Chen, Yu[1];Zhang, Bin[1];Zhu, Jinhui[1];Zhu, Chun-Xiang[3];Neoh, Koon-Gee[2];Kang, En-Tang[2]

机构：[1]E China Univ Sci & Technol, Adv Mat Lab, Dept Chem, Shanghai 200237, Peoples R China;[2]Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 119260, Singapore;[3]Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

年份：2009

卷号：95

期号：25

外文期刊名：APPLIED PHYSICS LETTERS

收录：;EI(收录号：20100212620676);WOS:【SCI-EXPANDED(收录号:WOS:000273037700050)】；

语种：英文

摘要：A solution-processable and electroactive complex of poly (N-vinylcarbazole)-derivatized graphene oxide (GO-PVK) was prepared via amidation of end-functionalized PVK, from reversible addition fragmentation chain transfer polymerization, with tolylene-2,5-diisocyanate-functionalized graphene oxide. The Al/GO-PVK/ITO device exhibits bistable electrical conductivity switching and nonvolatile rewritable memory effects. Both the OFF and ON states of the memory device are stable under a constant voltage stress of -1 V for up to 3 h, or under a pulse voltage stress of -1 V for up to 10(8) read cycles, with an ON/OFF state current ratio in excess of 10(3). (C) 2009 American Institute of Physics. [doi:10.1063/1.3276556]