文献类型：期刊文献

英文题名：Effect of thermal misfit stress on steam-driven delamination in electronic packages

作者：Zhang, Xian[1];Meng, Haoran[1,3];Wang, Hehui[2];Guo, Fenglin[1]

机构：[1]Shanghai Jiao Tong Univ, State Key Lab Ocean Engn, Sch Naval Architecture Ocean & Civil Engn, Shanghai 200240, Peoples R China;[2]East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai 200237, Peoples R China;[3]Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R China

年份：2018

卷号：194

起止页码：61

外文期刊名：ENGINEERING FRACTURE MECHANICS

收录：;EI(收录号：20181805120813);WOS:【SCI-EXPANDED(收录号:WOS:000429489600006)】；

基金：Financial support from the National Natural Science Foundation of China under Grant No. 11272206 is gratefully acknowledged.

语种：英文

外文关键词：Steam-driven delamination; Thermal misfit stress; Strain energy release rate; Microelectronic packaging

摘要：In this study, circular interfacial defects or delaminations between the die-attach layer and the substrate in electronic packages are analytically modeled to investigate the effect of thermal misfit stress on the steam-driven delamination during the solder reflow process. Based on Love-Kirchhoff plate theory, analytical solutions of strain energy and strain energy release rate of circular delaminations under the combined action of steam pressure and thermal stress are derived. By comparing the energy release rates of circular delamination under steam pressure with and without thermal stress, the contribution of thermal stress to the strain energy release rate is assessed quantitatively. Further, the contribution of thermal stress to the extension of elliptic delaminations is studied numerically. This study brings new understanding on the role that thermal stress plays in facilitating steam-driven delamination during the solder reflow process in electronic packages.