文献类型：期刊文献

英文题名：Insights into abnormal grain growth in copper thin films for reduced electrical resistivity: A quantitative multi-order-parameter phase-field study under finite element framework

作者：Peng, Wei[1];Gao, Jianbao[2];Lu, Tiwen[1];Sun, Binhan[1];Zhang, Xiancheng[1];Zhang, Lijun[2];Tu, Shantung[1]

机构：[1]East China Univ Sci & Technol, Sch Mech & Power Engn, Key Lab Pressure Syst & Safety, Minist Educ, Shanghai 200237, Peoples R China;[2]Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China

年份：2023

卷号：260

外文期刊名：ACTA MATERIALIA

收录：;EI(收录号：20233814771749);WOS:【SCI-EXPANDED(收录号:WOS:001075791000001)】；

基金：This work was financially supported by the National Key Research and Development Project (No. 2022YFB4600019) , National Natural Science Foundation of China (Nos. 52205152, 52275147) , Natural Sci-ence Foundation of Hunan Province for Distinguished Young Scholars (No. 2021JJ10062) , and Science Center for Gas Turbine Project from China (No. P2022-C-III-002-001) . The authors also would like to thank the MOOSE teams at Idaho National Laboratory for helpful advice.

语种：英文

外文关键词：Abnormal grain growth; Phase-field method; Copper thin films; Anisotropy; Electrical resistivity

摘要：Copper thin films are frequently utilized as microelectronic interconnects. Inducing abnormal grain growth (AGG) may result in reduced electrical resistivity of copper thin films. However, an in-depth understanding of AGG mechanism and quantitative simulation of microstructure evolution during AGG in copper thin films are still missing, prohibiting the regulation and even design of AGG process. In this paper, a multi-order-parameter phase-field (MOP-PF) model coupled with elastic mechanics under a finite element framework was first developed and applied to study the AGG mechanism in copper thin films. It was found that both elastic and grain boundary anisotropies can induce AGG, but elastic anisotropy dominates the evolution of individual grains. Subsequently, a quantitative simulation of microstructure evolution/kinetics during AGG in copper thin films was achieved by inputting the accurate materials parameters from theoretical/experimental data. A further combination with the Mayadas-Shatzkes model led to a quantitative prediction of the evolution of electrical resistivities, from which several feasible strategies were proposed for preparing high-performance copper thin films with reduced electrical resistivities. Furthermore, it is anticipated that the presently developed framework should be generally applicable for quantitative phase-field simulation of grain growth in bulk materials/films.