文献类型：期刊文献

英文题名：High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite: poly(N-vinylcarbazole) blend active layers

作者：Wang, Cheng[1];Chen, Yu[1];Zhang, Bin[1];Liu, Shanshan[1];Chen, Qibin[1];Cao, Yaming[1];Sun, Sai[1]

机构：[1]E China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai 200237, Peoples R China

年份：2016

卷号：45

期号：2

起止页码：484

外文期刊名：DALTON TRANSACTIONS

收录：;EI(收录号：20160101763646);WOS:【SCI-EXPANDED(收录号:WOS:000367312900011)】；

基金：The authors are grateful for the financial support of the National Natural Science Foundation of China (51333002, 21074034, 21404037), Research Fund for the Doctoral Program of Higher Education of China (20120074110004), and the Fundamental Research Funds for the Central Universities (WJ1514311).

语种：英文

外文关键词：Organometallics - Electric fields - Indium compounds - Threshold voltage - Atomic force microscopy - Perovskite - Fabrication - Heterojunctions - Tin oxides

摘要：A solution-processed organometallic halide perovskite-based bulk heterojunction (BHJ) memory device with a configuration of indium-doped tin oxide (ITO)/CH3NH3PbI3:PVK/Al has been successfully fabricated. Under a threshold voltage of -1.57 V, this device shows a nonvolatile write-once read-many-times (WORM) memory effect, with a maximum ON/OFF current ratio exceeding 10(3). In contrast, the ITO/CH3NH3PbI3/Al device showed only conductor characteristics, while the PVK-based device exhibited insulator behavior. Upon being subjected to voltages, an interesting filamentary nature of the CH3NH3PbI3:PVK film was also observed in situ at the microscopic nanometer level using a conductive atomic force microscopy (C-AFM) technique with a device configuration of Si/Pt/CH3NH3PbI3:PVK/Pt. The mechanism associated with the memory effect is discussed. The electricfield- induced intermolecular charge transfer effect between CH3NH3PbI3 and PVK, and the possible conformational ordering of the PVK side-chains/backbone under an applied bias voltage, may cause the electrical conductivity switching and WORM effect in the reported BHJ device.