详细信息

Novel hole transport materials based on N,N′-disubstituted-dihydrophenazine derivatives for electroluminescent diodes  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Novel hole transport materials based on N,N′-disubstituted-dihydrophenazine derivatives for electroluminescent diodes

作者:Zheng, Zhiwen[1,2];Dong, Qingchen[3,4];Gou, Liao[1,2];Su, Jian-Hua[1,2];Huang, Jinhai[1,2]

机构:[1]E China Univ Sci & Technol, Key Lab Adv Mat, Shanghai 200237, Peoples R China;[2]E China Univ Sci & Technol, Inst Fine Chem, Shanghai 200237, Peoples R China;[3]Taiyuan Univ Technol, MOE Key Lab Interface Sci & Engn Adv Mat, Taiyuan 030024, Peoples R China;[4]Taiyuan Univ Technol, Res Ctr Adv Mat Sci & Technol, Taiyuan 030024, Peoples R China

年份:2014

卷号:2

期号:46

起止页码:9858

外文期刊名:JOURNAL OF MATERIALS CHEMISTRY C

收录:;EI(收录号:20144600184173);WOS:【SCI-EXPANDED(收录号:WOS:000344998700009)】;

基金:Q. Dong thanks the financial support from the National Natural Foundation of China (Grant no.: 61307030), the Natural Science Foundation for Young Scientists of Shanxi Province, China (Grant no.: 2014021019-2), and the Outstanding Young Scholars Cultivating Program and the Qualified Personal Foundation of Taiyuan University of Technology (Grant no.: 2013Y003, tyut-rc201275a).

语种:英文

外文关键词:Cyclic voltammetry - Hole mobility - Single crystals - Optical properties - Tin oxides - Efficiency - Dihedral angle - Mass spectrometry - Crystal structure - Indium compounds - Organic light emitting diodes (OLED)

摘要:A series of novel hole transport materials for organic light-emitting diodes (OLEDs) based on 9,14-diphenyl-9,14-dihydrodibenzo[a, c] phenazine were synthesized and characterized by H-1 NMR and C-13 NMR, mass spectrometry and single crystal structure analysis methodologies. The crystal structures of three selected molecules reveal large dihedral angles between different functional units. The electro-optical properties of the materials were examined by UV-vis absorption, photoluminescence spectroscopy and cyclic voltammetry. The HOMO of the materials were between 4.83-5.08 eV, indicating a good match between the HOMO of indium tin oxide (ITO) and the HOMO of light-emitting layer, which renders the promising candidates as hole transport materials for organic light-emitting devices. In terms of the device with the structure of ITO/HTM (60 nm)/Alq(3) (50 nm)/LiF (1 nm)/Al (200 nm), the device b using N,N-diphenyl-4'-(14-phenyldibenzo[a,c] phenazin-9(14H)-yl)-[1,1'-biphenyl]-4-amine presented a maximum luminance of 17 437 cd m(-2) at 10.7 V and kept a high current efficiency (the maximum current efficiency is 2.25 cd A(-1)) at a high current density (>500 mA cm(-2)), which illustrates the exploited material possesses good hole transport and stable properties.

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