详细信息

High-quality p-type emitter using boron aluminum source for n-type TOPCon solar cells  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:High-quality p-type emitter using boron aluminum source for n-type TOPCon solar cells

作者:Wei, Jindi[1];Xu, Jiahui[1,2];Zhao, Xiaowen[1];Xu, Chuangen[1];Yuan, Xiao[1,2];Li, Hongbo[1];Hao, Guoqiang[1];Ye, Xiaojun[1]

机构:[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Yangtze Inst Solar Technol, Wuxi 214400, Jiangsu, Peoples R China

年份:2025

卷号:185

外文期刊名:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录:;EI(收录号:20244117168596);WOS:【SCI-EXPANDED(收录号:WOS:001335224500001)】;

基金:The authors would like to thank Jiangsu Zhongqing Photovoltaic Technology Co., Ltd. for providing diffusion equipment support. This work was supported by the National Key Research and Development Program of China (2023YFB420260202) , The Yangtze Institute for Solar Technology (Y20240202-RD) .

语种:英文

外文关键词:TOPCon solar cell; Emitter; Boron-aluminum source; Quokka3; Doping

摘要:In the current landscape of n-type Tunnel Oxide Passivated Contact (TOPCon) solar cell production, challenges persist with conventional gas boron sources used for the fabrication of p-type emitters, including their influence on emitter recombination and metal-semiconductor contact recombination. This research introduces a novel approach involving the diffusion of a boron-aluminum source via spin-coating, proposed as a replacement for the conventional gas boron source. This method facilitates a higher quality p-type emitter, at drive-in temperature of 900 degrees C and 30 min. The surface doping concentration of the p-type layer reached 3.18 x 1019 19 cm-3 , with a peak doping concentration of 5.36 x 1019 19 cm-- 3 . Studies show that the p-type emitter prepared with boron-aluminum source can reduce metal-semiconductor contact recombination and Auger recombination, due to its high surface doping concentration and shallow junction depth. Moreover, the overall process temperature for preparing ptype emitters with the boron-aluminum source is low, and the duration is short, which is advantageous for reducing energy consumption. Additionally, Quokka3 simulation results show that the efficiency of TOPCon solar cells prepared with the boron-aluminum source is 0.43 % higher than that of TOPCon cells prepared with the gaseous boron source.

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