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Electron paramagnetic resonance of poly(benzazole)s and conducting properties of N+-implanted poly(benzazole)s  ( EI收录)  

文献类型:期刊文献

英文题名:Electron paramagnetic resonance of poly(benzazole)s and conducting properties of N+-implanted poly(benzazole)s

作者:Wang, Shanfeng[1]; Wu, Pingping[1]; Han, Zhewen[1]

机构:[1] Department of Polymer Science and Engineering, East China University of Science and Technology, Shanghai 200237, China

年份:2001

卷号:42

期号:1

起止页码:217

外文期刊名:Polymer

收录:EI(收录号:2001535338589)

语种:英文

外文关键词:Charge transfer - Conductive plastics - Defects - Electric conductivity - Electron spin resonance spectroscopy - Heat treatment - Ion implantation - Nitrogen compounds - Paramagnetism - Solitons - Thermal effects

摘要:We present electron paramagnetic resonance (EPR) studies of the magnetic defect in poly(benzazole)s (including poly(p-phenylene benzobisthiazole) (PBZT), poly(p-phenylene benzobisoxazole) (PBO), poly(2,5-benzoxazole) (ABPBO), PBO-ABPBO and poly(1,4-phenylene benzobisoxazole-co-dimethylene benzobisoxazole) (PBO-PBOC2)) and the model compounds. Temperature dependence of the EPR spectra of poly(benzazole)s over the range 100-300 K and the effect of heat-treatment temperature on EPR parameters were also discussed. FeCl3·6H2O-doped PBZT was investigated in its EPR signals. The results of analyses of the detailed lineshapes and linewidths were discussed in terms of the soliton-antisoliton, polaron and bipolaron model of the magnetic defect. After that, the conductivity studies and Raman characterization of N+-implanted PBZT and PBO were reported. The room-temperature conductivity of these implanted polymers, approximately 0.1-10 S cm-1, is significantly higher than that of pristine polymers. It was revealed through Raman spectrum that the conductivity was attributed partially to the graphite laminar formed in the process of ion-implantation. The results of these studies contribute toward an identification of the origin and nature of the paramagnetic centers in poly(benzazole)s and toward an understanding of the charge transport mechanism.

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