文献类型：期刊文献

英文题名：Laser-localized hydrothermal synthesis of flexible ZnO gas sensor for room-temperature detection of nitrogen dioxide

作者：Qian, Bo[1];Fan, Hongri[1];Zhou, Wang[2]

机构：[1]Shanghai Univ Engn Sci, Sch Mech & Automot Engn, Shanghai 201620, Peoples R China;[2]East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai 200237, Peoples R China

年份：2022

卷号：33

期号：10

起止页码：8086

外文期刊名：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录：;EI(收录号：20220911740312);WOS:【SCI-EXPANDED(收录号:WOS:000763266500001)】；

基金：This project is supported by the National Key Research and Development Program of China (No. 2018YFB1105300), the National Natural Science Foundation of China (Grant No. 51705307), and the Open Project Program of the State Key Lab of CAD&CG (Grant No. A2015) Zhejiang University.

语种：英文

外文关键词：Wide band gap semiconductors - Semiconductor doping - Semiconductor lasers - Gases - Gas detectors - Chemical detection - Chemical sensors - Gas sensing electrodes - Nitrogen oxides - Substrates - Hydrothermal synthesis - II-VI semiconductors

摘要：In this work, a flexible ZnO-based gas sensor is developed for room-temperature detection of nitrogen oxide (NO2). The sensor is fabricated on polyimide (PI) substrate by highly efficient and scalable laser micro-processing techniques, including laser direct writing of carbonized electrode on PI and laser-localized hydrothermal synthesis of ZnO on the electrode. The gas sensing characteristics of the device, such as response, stability, and repeatability, are systematically investigated. The ZnO-based sensor shows a response of 0.71% for NO2 in room temperature, a good stability (30 days), and repeatability with the substrate curvatures bent from 22.34 to 4.16 mm in 1000 ppm NO2 at room temperature (25 degrees C). Unlike the traditional ZnO-based gas sensor, the device we made presents the characteristics of p-type semiconductor through gas sensing tests, which could be attributed to the possible doping of C and low performing temperature.