详细信息
热蒸发石墨烯基SnO_x-Sn传感器气敏性研究
Study on gas sensitivity of graphene-based SnO_x-Sn sensors fabricated by thermal evaporation
文献类型:期刊文献
中文题名:热蒸发石墨烯基SnO_x-Sn传感器气敏性研究
英文题名:Study on gas sensitivity of graphene-based SnO_x-Sn sensors fabricated by thermal evaporation
作者:王玮[1];高在青[1];蒋烨[1];杨宗耀[1];谢海芬[1]
机构:[1]华东理工大学理学院物理系,上海200237
年份:2018
卷号:37
期号:3
起止页码:11
中文期刊名:传感器与微系统
外文期刊名:Transducer and Microsystem Technologies
收录:CSTPCD;;CSCD:【CSCD_E2017_2018】;
基金:全国大学生创新实验资助项目(201510251062)
语种:中文
中文关键词:石墨烯;SnOx-Sn;热蒸发;甲醛;二氧化氮;气体传感器
外文关键词:graphene ; SnOx-Sn ; thermal evaporation ; formaldehyde ; nitrogen dioxide; gas sensor
摘要:通过化学气相沉积法制备石墨烯并采用热蒸发法在石墨烯上沉积锡(Sn)及其氧化物,得到石墨烯基SnO_x-Sn气敏传感器,研究其在室温下对低体积分数甲醛和二氧化氮(NO_2)气体的气敏性及SnO_x-Sn膜厚和基底加热温度对传感器气敏性的影响。通过场发射扫描电镜(FESEM)、原子力显微镜(AFM)等表征手段研究了石墨烯基SnO_x-Sn气敏传感器的形态结构。
Graphene is fabricated by chemical vapor deposition. Graphene-based SnO_x-Sn gas sensor is fabricated by thermal evaporation. The gas sensitivity of sensor to low volume fraction of formaldehyde gas or nitrogen dioxide gas at room temperature and effect of thickness of SnO_x-Sn film and heating temperature of substrate on gas sensitivity of sensor are studied. The morphological structure of the graphene-based SnO_x-Sn gas sensor is characterized by field emission scanning electron microscopy( FESEM) and atomic force microscopy(AFM).
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