文献类型：期刊文献

英文题名：Electroluminescence dependence of the simplified green light organic light emitting diodes on in situ thermal treatment

作者：Mu, Haichuan[1];Rao, Lu[1];Li, Weiling[2];Wei, Bin[2];Wang, Keke[1];Xie, Haifen[1]

机构：[1]E China Univ Sci & Technol, Sch Sci, Dept Phys, Shanghai 200237, Peoples R China;[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Sch Mech Engn & Automat, Shanghai 200072, Peoples R China

年份：2015

卷号：357

起止页码：2241

外文期刊名：APPLIED SURFACE SCIENCE

收录：;EI(收录号：20155201720249);WOS:【SCI-EXPANDED(收录号:WOS:000366219700119)】；

语种：英文

外文关键词：PHOLED; EL performance; In situ thermal treatment; Morphology

摘要：Simplified multilayer green light phosphorescent organic light emitting diodes (PHOLED) with the structure of ITO/MoO3 (1 nm)/CBP(20 nm)/CBP:Ir(ppy)(3) (1 wt%) (15 nm)/TPBi(60 nm)/LiF(0.5 nm)/Al were fabricated via thermal evaporation and in situ thermal treatment (heating the OLED substrates to certain temperatures during the thermal evaporation of the organic materials) was performed. The effect of the in situ thermal treatment on the electroluminescence (EL) performance of the PHOLED was investigated. It was found that the OLED exhibited strong EL dependence on the thermal treatment temperatures, and their current efficiency was improved with the increasing temperature from room temperature (RT) to 69 degrees C and deteriorated with the further increasing temperature to 105 degrees C. At the brightness of 1000 cd/m(2), over 80% improvement of the current efficiency at the optimal thermal treatment temperature of 69 degrees C (64 cd/A) was demonstrated compared to that at RT (35 cd/A). Meanwhile, the tremendous influences of the in situ thermal treatment on the morphology of the multilayer CBP/CBP:Ir(ppy)(3)/TPBi were also observed. At the optimal thermal treatment temperature of 69 degrees C, the improvement of the EL performance could be ascribed to the enhancement of the electron and hole transporting in the CBP:Ir(ppy)(3) emitting layer, which suppressed the triplets self-quenching interactions and promoted the charge balance and excitons formation. The working mechanism responsible for such EL dependence was discussed in detail. (C) 2015 Elsevier B.V. All rights reserved.