详细信息
溅射工艺参数对BaAl2S4薄膜沉积速率、化学组成及电致发光特性的影响
The effect of sputtering process on the deposition rate,composition and electroluminescent properties of BaAl_2S_4 thin films
文献类型:期刊文献
中文题名:溅射工艺参数对BaAl2S4薄膜沉积速率、化学组成及电致发光特性的影响
英文题名:The effect of sputtering process on the deposition rate,composition and electroluminescent properties of BaAl_2S_4 thin films
作者:范云华[1];肖田[1];林明通[2];陈国荣[1];杨云霞[1]
机构:[1]华东理工大学材料科学与工程学院,上海200237;[2]上海广电电子股份有限公司平板显示技术研发中心,上海200081
年份:2008
卷号:36
期号:4
起止页码:58
中文期刊名:化工新型材料
外文期刊名:New Chemical Materials
收录:北大核心:【北大核心2004】;CSCD:【CSCD2011_2012】;
语种:中文
中文关键词:BaAl2S4:Eu薄膜;射频磁控溅射;沉积速率;化学计量;EL特性
外文关键词:BaAl2S4:Eu thin film, rF magnetron sputtering, deposition rate, chemical composition, electroluminescent property
摘要:BaAl2S4:Eu发光薄膜是最有希望实现彩色无机电致发光显示器的蓝色电致发光材料。用射频磁控溅射法制备了厚度在150~375nm之间的BaAl2S4:Eu薄膜,研究了溅射功率、Ar/H2S流量比和气压对其沉积速率和化学组成的影响,考察了不同退火条件下BaAl2S4:Eu薄膜的电致发光特性。并根据这些结果分析了较优的工艺条件。
BaAl2S4 : Eu thin film is the most promising blue phosphor for full-color inorganic electroluminescent displays. BaAl2S4 :Eu thin film phosphors with thickness in the range of 150-375nm were deposited by r. f magnetron sputtering in H2 S and Ar atmosphere. The effects of sputtering power, At/ H2 S ratio and the gas pressure on the deposition rate and the composition of the BaAl2S4 :Eu thin films were investigated. Meanwhile, the electrolurninescent properties of the BaAl2S4 :Eu thin film phosphors were studied under different annealing conditions. Optimum processing condition for the BaAl2S4 : Eu thin film was analyzed.
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