文献类型：期刊文献

英文题名：Small-Sized CsPbI3 Quantum Dots for High-Performance Pure Red Light-Emitting Diodes

作者：Yang, Wenda[1];Li, Jiaxin[1];Cheng, Ziyan[1];Ye, Siyuan[1];Zhang, Xue[1,2];Li, Yan[1]

机构：[1]East China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai Key Lab Funct Mat Chem, Shanghai 200237, Peoples R China;[2]Quanzhou Normal Univ, Inst Photon Technol, Dept Optoelect Engn, Quanzhou 362000, Peoples R China

年份：2025

卷号：8

期号：7

起止页码：4592

外文期刊名：ACS APPLIED ENERGY MATERIALS

收录：;EI(收录号：20251318146431);WOS:【SCI-EXPANDED(收录号:WOS:001454433700001)】；

基金：This research was sponsored by the Natural Science Foundation of Shanghai (grant no 23ZR1415900) and the Fundamental Research Funds for the Central Universities (no 222201717003). The authors thank the Research Center of Analysis and Test of East China University of Science and Technology for the help with the characterization.

语种：英文

外文关键词：CsPbI3 quantum dots; light-emittingdiodes; stability; pure-red emitting; perovskitenanocrystals

摘要：Small-sized CsPbI3 quantum dots (QDs) are highly promising for fabricating stable pure-red (630-640 nm) light-emitting diodes (LEDs), effectively avoiding the halide segregation issues commonly observed in mixed-halide perovskite nanocrystals. However, synthesizing stable, small-sized colloidal CsPbI3 QDs for high-efficiency LED fabrication remains a significant challenge. In this study, a combined strategy of metal ion doping and ligand engineering was employed to synthesize small colloidal CsPbI3 QDs (approximately 5 nm) with pure red emission (630 nm) using the hot injection method. Combined with post-treatment using n-butylammonium iodide (TBAI), the Zn2+-doped CsPbI3 QDs achieved a photoluminescence quantum yield (PLQY) as high as 94% and demonstrated excellent stability, retaining 92% of their initial PL intensity after 80 days of exposure in air. The LED devices fabricated with the obtained CsPbI3 QDs as emitter layers demonstrated bright electroluminescence at 636 nm with the highest external quantum efficiency value of 10.3%. Furthermore, Zn2+-doped CsPbI3 QDs LEDs also exhibited good operational stability with a half-life of 77 min.