文献类型：期刊文献

英文题名：Electrical properties of Ag thin films deposited by the improved SILAR method

作者：Wang, Lei[1]; Kang, Shi-Zhao[1]; Mu, Jin[1]

机构：[1]E China Univ Sci & Technol, Dept Chem, Shanghai 200237, Peoples R China

年份：2006

卷号：27

期号：3

起止页码：393

外文期刊名：JOURNAL OF DISPERSION SCIENCE AND TECHNOLOGY

收录：;EI(收录号：2006119761333);WOS:【SCI-EXPANDED(收录号:WOS:000235868300015)】；

语种：英文

外文关键词：Ag; thin film; SILAR method; electrical properties

摘要：Ag films were deposited on glass substrates using the successive layer adsorption and reaction (SILAR) method and characterized with XRD and AFM. The I-V curves of the thicker Ag films obeyed ohmic law because of the formation of the continuous films. After annealing at 300 degrees C in N-2, the conductance increased due to the removal of imperfections. Compared with the thicker film, the thinner Ag films showed nonlinear I-V curves. After annealing, these films were inconductible. This may be ascribed to the destruction of the junction, that existed between the Ag islands. The absorption spectra of the films proved the formation of the Ag islands after annealing. With the thickness of the films further decreasing, the Ag films became insulated.