文献类型：期刊文献

英文题名：Electro-Thermal-Stress Breakdown Analysis of GaAs p-i-n Diodes Under Ka-Band High-Power Microwave Pulse Injection

作者：Zhang, Yue[1];Zhou, Liang[2];Ma, Xinyu[2];Huang, Jingwen[2];Li, Mingxuan[2];Liu, Yadong[3]

机构：[1]East China Univ Sci & Technol, Sch Informat Sci & Engn, Shanghai 200237, Peoples R China;[2]Shanghai Jiao Tong Univ, State Key Lab Radio Frequency Heterogeneous Integr, Shanghai 200240, Peoples R China;[3]Shanghai Jiao Tong Univ, Sch Elect Engn, Shanghai 200240, Peoples R China

年份：2026

外文期刊名：IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

收录：;EI(收录号：20263021192740);Scopus(收录号：2-s2.0-105045742283);WOS:【SCI-EXPANDED(收录号:WOS:001830753100001)】；

基金：This work was supported in part by the National Natural Science Foundation of China under Grant U24B2091, Grant 62325110, and Grant 62188102; and in part by the National Key Research and Development Project under Grant 2023YFB4403802.

语种：英文

外文关键词：P-i-n diodes; Ka-band; Human factors; Stress; Gallium arsenide; Thermal stresses; Diodes; PIN photodiodes; Temperature; Electric breakdown; Gallium arsenide (GaAs) positive-intrinsic-negative (p-i-n) technology; high-power capacity; high-power microwave (HPM); intentional electromagnetic interference (IEMI); Ka-band limiter; round rectangular; the electro-thermal-stress effect

摘要：This article aims at analyzing the electro-thermalstress effects of two types of round rectangular gallium arsenide (GaAs) positive-intrinsic-negative (p-i-n) diodes for four Ka-band two-stage limiters utilized against intentional electromagnetic interference (IEMI). p-i-n diodes with a larger radius of round rectangular are applied to the first stage of limiters 1 and 2 with one and two in series, respectively, while p-i-n diodes of a smaller radius are employed in limiters 3 and 4 with different circumferences. Adopted four limiters are measured under high-power microwave (HPM) pulse injection at 33, 35, and 37 GHz with pulsewidth of 100 ns, 500 ns, and 1 & micro;s and a PRF of 1 kHz. p-i-n diodes in limiters 1 and 2 are ruined with pulse power of 59.3 and 60.3 dBm, respectively, at 33 GHz with 1-& micro;s pulse duration time, whereas diodes in limiters 3 and 4 remain basically intact under pulse power of 63.3 dBm. Subsequently, the electro-thermal-stress analysis of p-i-n diodes is conducted in three facets. First, p-i-n diodes in limiters 1 and 3 are analyzed under two conditions: power applied to the anode dominated by hole mobility and energy injected into the cathode resulting from electron mobility. Second, the ground via inductance effect is discussed through the results of improved limiters 2 and 4. Third, thermal accumulation of p-i-n diodes with two different structures in four limiters is discovered with a higher PRF of 333 kHz. Finally, design procedures of high-power capacity Ka-band limiters are summarized based on results of different RF frequencies.