文献类型：期刊文献

英文题名：The Syntheses, Characterization and Field Effect Transistor Performance of Thiazole-Based Dicyanomethylene-Endcapped Quinoidal Compounds

作者：Ouyang, Guangcheng[1];Feng, Yan[1];Wang, Jinlong[1];Wang, Dewei[1];Li, Hongxiang[2]

机构：[1]Univ Chinese Acad Sci, Key Lab Synthet & Self Assembly Chem Organ Funct, Shanghai Inst Organ Chem, Shanghai 200032, Peoples R China;[2]East China Univ Sci & Technol, Key Lab Adv Mat & Inst Fine Chem, Sch Chem & Mol Engn, 130 Meilong Rd, Shanghai 200237, Peoples R China

年份：2021

卷号：6

期号：46

起止页码：13034

外文期刊名：CHEMISTRYSELECT

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000729501700003)】；

基金：This work was supported by the National Natural Science Foundation of China (Grant Nos. 21875279, 21790362, 22075080)

语种：英文

外文关键词：Charge transfer complex; Materials science; Quinoidal compounds; Semiconductors; Thiazole

摘要：Thiazole-based dicyanomethylene-endcapped quinoidal compounds, QBTzTT8, QBTzTT16 and QBTzTT24 with different length of alkyl chains, were designed and synthesized. These compounds exhibit a relative low LUMO energy level of -4.55 eV, and can spontaneously react with metals Ag and Cu to form charge transfer complexes which is evidenced by Raman spectra, Infrared spectra and color change. Thin film transistors of QBTzTT16 and QBTzTT24 are fabricated, and metals Ag, Cu and Au are used as source-drain electrodes. The devices display typical n-type transistor performance. The mobility of devices shows nearly non-dependent on source-drain electrodes, being attributed to the spontaneously formed ultrathin charge-transfer complex layer at the semiconductor/Cu (Ag) electrode interface. The average electron mobilities of QBTzTT16 and QBTzTT24 are 4.7x10(-2) cm(2) V-1 s(-1) and 6.8x10(-2) cm(2) V-1 s(-1), respectively.