文献类型：期刊文献

英文题名：Thermoelectric hydrogen sensor working at room temperature prepared by bismuth-telluride P-N couples and Pt/γ-Al₂O₃

作者：Huang, Hu[1];Luan, Weiling[1];Zhang, Jian-Song[1];Qi, Yun-Shi[1];Tu, Shan-Tung[1]

机构：[1]E China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai 200237, Peoples R China

年份：2008

卷号：128

期号：2

起止页码：581

外文期刊名：SENSORS AND ACTUATORS B-CHEMICAL

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000252792100032)】；

语种：英文

外文关键词：hydrogen sensor; thermoelectric effect; bismuth-telluride

摘要：A hydrogen sensor working at room temperature with high sensitivity, good selectivity and simple structure was presented in this paper. Four couples of P- and N-type bismuth-telluride films were connected in series to serve as the feedback part of the hydrogen sensor with a high Seebeck coefficient of 1.1 mV/K. A platinum catalyst was deposited on gamma-Al2O3 acting as a sensitive part. Linear relationships between the output voltage and the hydrogen concentration as well as the flow rate were found when the hydrogen concentration was higher than 0.5 vol.%. As for the 3 vol.% H-2/Air gas with a 100 ml/min flow rate at room temperature, the response and recovery times were about 30 and 55 s, respectively, and the error of repeatability was less than 0.3%. (C) 2007 Elsevier B.V. All rights reserved.