文献类型：期刊文献

英文题名：Preparation and research on performance of multi-layer Bi/Sb composite nano-film

作者：Dai, Jingjing[1]; Wang, Xuesheng[1]; Shu, Min[1]; Qi, Xuegui[1]

机构：[1] School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai, China

年份：2011

卷号：2

起止页码：1228

外文期刊名：ICMREE2011 - Proceedings 2011 International Conference on Materials for Renewable Energy and Environment

收录：EI(收录号：20113014174727)

语种：英文

外文关键词：Silicon wafers - Single crystals - Seebeck coefficient - Electric power factor - Thin films - Modulation - Film preparation - Substrates

摘要：In this paper, the preparation techniques of multi-layer Bi/Sb composite semiconductor nano-film were developed with single-crystal silicon as thermal insulation substrate and Bi/Sb as sputter targets using magnetron sputtering. Four kinds of semiconductor nano-film were fabricated with the different Bi/Sb modulation ratios which respectively equaled 14, 32, 41, 14 and the modulation period was fixed on 40nm. And then, the Seebeck coefficient, electric conductivity and power factor of the semiconductor nano-film were tested with the variation of temperature which ranged from 160K to 250K. The experimental results indicated that the Seebeck coefficient and the power factor reached the maximum values of 2.48μV/K and 26.5μW/mK2 at 235K. ? 2011 IEEE.