文献类型：期刊文献

英文题名：Micro-crosslinked polyimide nanocomposites with low dielectric constant and low dielectric loss for microwave antenna with molecular dynamics

作者：Peng, Zhiyuan[1];Ye, An[2];Zhang, Ling[1];Li, Xiaolin[2];Lian, Cheng[3];Li, Chunzhong[1]

机构：[1]East China Univ Sci & Technol, Shanghai Engn Res Ctr Hierarch Nanomat, Frontiers Sci Ctr Materiobiol & Dynam Chem, Sch Mat Sci & Engn,Minist Educ,Key Lab Ultrafine M, Shanghai 200237, Peoples R China;[2]East China Univ Sci & Technol, Sch Phys, Shanghai 200237, Peoples R China;[3]East China Univ Sci & Technol, Sch Chem Engn, State Key Lab Chem Engn, Shanghai 200237, Peoples R China

年份：2024

卷号：46

外文期刊名：COMPOSITES COMMUNICATIONS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:001170883700001)】；

基金：This work was supported by the National Natural Science Foundation of China (22278140, U22B20143) , the Science and Technology Commission of Shanghai Municipality (22DZ1205900) , and the Fundamental Research Funds for the Central Universities.

语种：英文

外文关键词：Polyimide; Polyhedral oligomeric silsesquioxane; Low dielectric; Molecular dynamics

摘要：Low dielectric polyimide (PI) is a crucial component of interlayer dielectric materials in modern electronic devices, which effectively mitigates signal delay and power loss issues arising from the high integration. Herein, low dielectric nanocomposite with micro-crosslinked structure is prepared through in-situ polymerization of fluorinated PI (f-PI) and polyhedral oligomeric silsesquioxane (POSS). Four f-PIs with different positions of trifluoromethyl and structure of backbone, and three functionalized POSS are studied by density functional theory (DFT) and classical molecular dynamics (MD) simulations to reveal the effects of the PI structure and the interfacial interaction of POSS with PI on dielelectric constant. Specifically, the dielectric constant and dielectric loss of 3 wt% 8NH(2)-POSS/PI1 at 1 kHz are reduced to 2.40 and 0.0017, respectively. The micro-crosslinked structure provides better thermal stability (513.3 degrees C), coefficient of thermal expansion (42.14 ppm degrees C-1), and acid resistance, meeting the requirements of integrated circuits (ICs) processing. In comparison to commercial epoxy boards (FR4), the 3 wt% 8NH(2)-POSS/PI exhibits lower S-11 signal loss (-10.874 dB) and provides greater magnetic fields (2.00 G) near 3.0 GHz as the substrate of Nitrogen-Vacancy (NV) centers sensor. This well-performing low dielectric nanocomposite offers a promising medium for ICs.